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NSV1C300ET4G-VF01

Onsemi

NSV1C300ET4G-VF01 by Onsemi

NSV1C300ET4G-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 50, Vce of 100V, and Ic of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

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AZTECH Wire

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QUARKTWIN TECHNOLOGY LTD

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RC Electronics

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TANS Electronics

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SupplyDigital Components

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UHIMA Technologies

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Overview

Discover the power and reliability of the NSV1C300ET4G-VF01 by Onsemi, a top-of-the-line Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 100V and a maximum collector current of 3A, this PNP transistor offers unparalleled performance and efficiency. Manufactured by Onsemi, a trusted leader in semiconductor technology, you can trust that this transistor is of the highest quality. Whether you're designing industrial machinery or automotive electronics, this transistor's small outline package and gull wing terminals make it easy to integrate into your projects. Take advantage of its high DC current gain and fast switching capabilities to elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, ensuring a longer lifespan and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications and can handle higher voltages, making them suitable for a wide range of switching tasks.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers fast response times and efficient operation in switching circuits.

Surface Mount: YES

Surface mount capability allows for easy installation and soldering onto circuit boards, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape provides a standardized form factor for easy integration into various electronic devices and equipment.

No. of Terminals: 2

With only 2 terminals, this transistor is easy to connect and integrate into circuits, reducing complexity and potential points of failure.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures consistent and stable amplification of current in the transistor, leading to reliable performance.

Maximum Collector-Emitter Voltage: 100 V

With a maximum collector-emitter voltage rating of 100V, this transistor can handle relatively high voltage levels, making it versatile for various applications.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, known for its stability and efficiency in electronic components like transistors.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3A allows the transistor to handle higher current loads, enabling it to power larger components or circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability, ensuring a strong and reliable connection between the transistor and the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

The transistor can withstand peak reflow temperatures for up to 30 seconds, making it suitable for reflow soldering processes during manufacturing.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes, ensuring proper solder joints.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures that the transistor meets automotive-grade reliability and quality standards, making it suitable for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

A high nominal transition frequency of 100MHz indicates that the transistor can switch at high speeds, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV1C300ET4G-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NSV1C300ET4G-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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