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NSV1C300ET4G

Onsemi

NSV1C300ET4G by Onsemi

NSV1C300ET4G by Onsemi is a PNP BJT with 3A IC, 120 hFE, and 33W power dissipation. Ideal for applications requiring high current amplification in surface-mount configurations, it operates up to 150°C making it suitable for various power control circuits.

Median Price

$0.371

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,816 parts In-Stock

1+ parts

$1.190

100+ parts

$0.493

1k+ parts

$0.347

10k+ parts

$0.273

2,816

$1.190

$0.493

$0.347

$0.273

Flip Electronics (Authorized)

USA . 167,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

167,500

-

-

-

-

Rochester

USA . 52,100 parts In-Stock

1+ parts

-

100+ parts

$0.349

1k+ parts

$0.290

10k+ parts

$0.258

52,100

-

$0.349

$0.290

$0.258

Verical

USA . 52,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.393

10k+ parts

$0.323

52,100

-

-

$0.393

$0.323

Future Electronics

Canada . 12,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.345

12,500

-

-

-

$0.345

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,387 parts In-Stock

1+ parts

$0.272

100+ parts

-

1k+ parts

-

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2,387

$0.272

-

-

-

Nova Conductors

Japan . 63 parts In-Stock

1+ parts

$0.349

100+ parts

-

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63

$0.349

-

-

-

Flip Electronics

USA . 167,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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167,500

-

-

-

-

Vyrian

USA . 56,620 parts In-Stock

1+ parts

-

100+ parts

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56,620

-

-

-

-

Chip Stock

USA . 23,800 parts In-Stock

1+ parts

-

100+ parts

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23,800

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-

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-

IBS Electronics

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.372

15,000

-

-

-

$0.372

Classic Components Corporation

USA . 12,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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12,500

-

-

-

-

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.531

10,000

-

-

-

$0.531

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 56,998 parts In-Stock

1+ parts

$0.238

100+ parts

-

1k+ parts

-

10k+ parts

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56,998

$0.238

-

-

-

Corphita

USA . 292 parts In-Stock

1+ parts

$0.257

100+ parts

-

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292

$0.257

-

-

-

Corohmni

South Africa . 169 parts In-Stock

1+ parts

$0.280

100+ parts

-

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-

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169

$0.280

-

-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.349

100+ parts

-

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1,000

$0.349

-

-

-

iodParts Technologies Inc.

India . 172,500 parts In-Stock

1+ parts

-

100+ parts

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172,500

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-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 15,385 parts In-Stock

1+ parts

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15,385

-

-

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Lixinc

USA . 9,881 parts In-Stock

1+ parts

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9,881

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Metaverse IC Inc.

Canada . 7,825 parts In-Stock

1+ parts

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100+ parts

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7,825

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-

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Kulean Microsystems

USA . 7,494 parts In-Stock

1+ parts

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100+ parts

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7,494

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-

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Problanco Electronics

Mexico . 7,393 parts In-Stock

1+ parts

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7,393

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-

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TANS Electronics

Latvia . 7,376 parts In-Stock

1+ parts

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7,376

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-

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Kepictronics

USA . 2,500 parts In-Stock

1+ parts

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2,500

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SupplyDigital Components

Austria . 783 parts In-Stock

1+ parts

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783

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UHIMA Technologies

Türkiye . 765 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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765

-

-

-

-

Overview

Unlock the power of innovation with the Onsemi NSV1C300ET4G Power Bipolar Junction Transistor. Designed by a trusted manufacturer, this PNP transistor offers reliability and efficiency for a variety of applications. With a maximum power dissipation of 33 W and a minimum DC current gain of 120, this transistor provides exceptional performance under demanding conditions. Whether you are working on automotive, industrial or consumer electronics projects, the NSV1C300ET4G delivers value, benefits and advantages that will elevate your designs to the next level. Choose quality, choose Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: PNP

PNP transistors are ideal for applications where positive voltage control is needed, making this product suitable for specific circuit requirements.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, enhancing the overall efficiency of the system.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 33 W

High power dissipation capacity enables the transistor to handle significant power loads, making it suitable for power amplification applications.

Minimum DC Current Gain (hFE): 120

High DC current gain ensures reliable and stable amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to withstand elevated temperature environments without performance degradation.

Maximum Collector Current (IC): 3 A

High collector current rating enables the transistor to handle large current flows, making it suitable for power switching applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and ensures reliable electrical connections during assembly.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes thermal stress on the component during soldering, enhancing its overall reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for lead-free soldering processes, meeting industry regulations and environmental standards.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV1C300ET4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NSV1C300ET4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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