Loading...

NSV1C301CTWG

Onsemi

NSV1C301CTWG by Onsemi

NSV1C301CTWG by Onsemi is a NPN BJT transistor for switching applications. It has VCEsat of 0.25V, hFE of 80, and IC of 3A. With a max operating temperature of 150 °C, it is ideal for small outline power designs in automotive electronics.

Median Price

$0.586

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 44,451 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.651

10k+ parts

-

44,451

-

-

$0.651

-

Rochester

USA . 451 parts In-Stock

1+ parts

-

100+ parts

$0.522

1k+ parts

$0.433

10k+ parts

$0.387

451

-

$0.522

$0.433

$0.387

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,269 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

-

10k+ parts

-

1,269

$0.406

-

-

-

Vyrian

USA . 1,234 parts In-Stock

1+ parts

$0.427

100+ parts

-

1k+ parts

-

10k+ parts

-

1,234

$0.427

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,396 parts In-Stock

1+ parts

$0.384

100+ parts

-

1k+ parts

-

10k+ parts

-

1,396

$0.384

-

-

-

Corohmni

South Africa . 286 parts In-Stock

1+ parts

$0.427

100+ parts

-

1k+ parts

-

10k+ parts

-

286

$0.427

-

-

-

TANS Electronics

Latvia . 7,541 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,541

-

-

-

-

SupplyDigital Components

Austria . 4,732 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,732

-

-

-

-

Kulean Microsystems

USA . 3,290 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,290

-

-

-

-

Problanco Electronics

Mexico . 1,982 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,982

-

-

-

-

UHIMA Technologies

Türkiye . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

60

-

-

-

-

Overview

Unleash the power of your electronics with the NSV1C301CTWG by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unparalleled performance in switching applications. With a maximum VCEsat of just 0.25V and a minimum DC current gain of 80, this NPN transistor is designed to optimize power dissipation and efficiency. Whether you're working on automotive, industrial, or consumer electronics projects, this transistor provides the reliability and quality you need. Elevate your designs with the NSV1C301CTWG and experience the difference Onsemi brings to your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides good durability and resistance to heat, making this transistor suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SINGLE

The single configuration simplifies circuit design and ensures ease of integration into different electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in various switching tasks.

Surface Mount: YES

Surface mount capability allows for easy and secure installation of the transistor onto a circuit board, saving space and providing a clean appearance.

Maximum VCEsat: 0.25 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency and reduced power losses in the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for easy handling and mounting in electronic devices.

Terminal Form: GULL WING

The gull wing terminal form ensures secure and reliable connections during soldering, enhancing the overall reliability of the transistor in the circuit.

No. of Terminals: 4

With four terminals, this transistor offers flexibility in circuit connections and allows for versatile integration into different electronic systems.

Maximum Power Dissipation (Abs): 5 W

The high power dissipation rating of 5 W indicates the transistor's ability to handle significant power levels without overheating or compromising performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact designs in electronic devices.

Minimum DC Current Gain (hFE): 80

A minimum hFE value of 80 ensures stable and consistent amplification characteristics in the transistor, making it suitable for high-performance applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature of 150 °C, this transistor can withstand elevated temperatures and harsh environments, ensuring reliable operation in diverse conditions.

Maximum Collector-Base Capacitance: 30 pF

The low collector-base capacitance of 30 pF minimizes signal distortion and ensures high-frequency operation, making this transistor ideal for high-speed applications.

Maximum Collector-Emitter Voltage: 100 V

The maximum collector-emitter voltage rating of 100 V allows the transistor to handle higher voltages in the circuit, making it versatile for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent performance, reliability, and efficiency, making this transistor a durable and high-quality choice for various electronic applications.

Minimum Operating Temperature: -55 °C

The low operating temperature of -55 °C ensures reliable performance in cold environments, making this transistor suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle high currents, making it suitable for power applications and circuits that require robust performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring stable and reliable connections in the circuit.

Terminal Position: SINGLE

The single terminal position simplifies circuit board layout and ensures ease of integration, making the transistor ideal for space-constrained designs.

Case Connection: COLLECTOR

The collector case connection simplifies circuit configuration and improves heat dissipation, enhancing the overall performance and reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reflow processes during assembly, maintaining the integrity of the transistor.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C allows for reliable and efficient soldering of the transistor onto the circuit board, ensuring durable connections.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high-quality and reliable performance of the transistor, making it suitable for automotive and other demanding applications.

Nominal Transition Frequency (fT): 120 MHz

The high nominal transition frequency of 120 MHz indicates fast switching speeds and high-frequency operation, making this transistor ideal for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NSV1C301CTWG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

30 pF

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

5 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

NSV1C301CTWG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5