Loading...

2N3053APBFREE

Central Semiconductor

2N3053APBFREE by Central Semiconductor

2N3053APBFREE by Central Semiconductor is a NPN BJT with VCEsat of 0.3V, hFE of 50, and IC of 0.7A. Ideal for power applications, it has a max operating temp of 200°C and fT of 100MHz. With a collector-emitter voltage of 60V, it suits various electronic designs requiring high power dissipation up to 5W.

Median Price

$9.050

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 635 parts In-Stock

1+ parts

$9.050

100+ parts

$5.330

1k+ parts

$3.870

10k+ parts

-

635

$9.050

$5.330

$3.870

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,011 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,011

-

-

-

-

Nova Conductors

Japan . 85 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

85

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 723 parts In-Stock

1+ parts

$17.689

100+ parts

-

1k+ parts

-

10k+ parts

-

723

$17.689

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 24,364 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,364

-

-

-

-

Microchip USA

USA . 5,907 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,907

-

-

-

-

Continental Prestige Electronics

USA . 1,784 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,784

-

-

-

-

Argo Parts USA

USA . 1,379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,379

-

-

-

-

Bastille Electronics

Australia . 120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

120

-

-

-

-

Overview

Upgrade your power applications with Central Semiconductor's 2N3053APBFREE Power Bipolar Junction Transistor. With a maximum VCEsat of just 0.3V and a high DC current gain of 50, this NPN transistor delivers superior performance in a compact cylindrical package. Whether you're designing power supplies, amplifiers, or motor control systems, this transistor's low collector-emitter voltage and high power dissipation capabilities ensure optimal efficiency and reliability. Trust Central Semiconductor for quality components that meet your power needs effortlessly.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal package body material provides better heat dissipation, ensuring the transistor can operate efficiently at high power levels.

Maximum VCEsat: 0.3 V

The low VCEsat value indicates minimal saturation voltage, leading to lower power dissipation and improved efficiency in switching applications.

Minimum DC Current Gain (hFE): 50

With a minimum DC current gain of 50, this transistor can provide sufficient amplification and performance in various electronic circuits.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature allows for reliable operation in a wide range of environments, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating provides a wide safety margin and allows the transistor to handle higher voltage levels without breakdown.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3053APBFREE attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

15 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

5 W

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2N3053APBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20