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PHPT61002NYCLHX

Nexperia

PHPT61002NYCLHX by Nexperia

PHPT61002NYCLHX by Nexperia is a NPN BJT transistor for switching applications. It has VCEsat of 0.3V, hFE of 20, and IC of 2A. With a max operating temperature of 175°C, it is ideal for high-power dissipation in small outline packages.

Median Price

$0.770

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,147 parts In-Stock

1+ parts

$0.770

100+ parts

$0.308

1k+ parts

$0.235

10k+ parts

$0.162

2,147

$0.770

$0.308

$0.235

$0.162

Mouser Electronics

USA . 899 parts In-Stock

1+ parts

$0.770

100+ parts

$0.308

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$0.235

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$0.199

899

$0.770

$0.308

$0.235

$0.199

Verical

USA . 3,500 parts In-Stock

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-

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$0.211

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$0.144

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$0.143

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$0.211

$0.144

$0.143

Chip1Stop

Japan . 1 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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$0.182

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$0.182

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Vyrian

USA . 3,464 parts In-Stock

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Chip Stock

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Argo Parts USA

USA . 2,149 parts In-Stock

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$0.182

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$0.177

2,149

$0.182

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$0.177

Netroflash

USA . 100 parts In-Stock

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$0.182

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100

$0.182

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Continental Prestige Electronics

USA . 759 parts In-Stock

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$0.334

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$0.212

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$0.118

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$0.101

759

$0.334

$0.212

$0.118

$0.101

Ampacity Inc.

Singapore . 461 parts In-Stock

1+ parts

$0.390

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461

$0.390

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Aztec Data Supply Inc.

USA . 2,855 parts In-Stock

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$1.716

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Corohmni

South Africa . 378 parts In-Stock

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$1.807

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$1.807

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AZTECH Wire

Italy . 13,328 parts In-Stock

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$14.630

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Supply Digital

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Eastek

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GreenTree Electronics

Israel . 1,500 parts In-Stock

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iodParts Technologies Inc.

India . 1,225 parts In-Stock

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$0.382

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Overview

Power up your electronic projects with the PHPT61002NYCLHX by Nexperia. Manufactured with precision and expertise, this NPN power bipolar junction transistor is designed for switching applications, offering a maximum VCEsat of just 0.3V and a minimum DC current gain of 20. With a compact small outline package and a maximum operating temperature of 175°C, this transistor provides reliable performance in various environments. Trust Nexperia to deliver high-quality components that meet your power needs efficiently and effectively. Elevate your designs with the PHPT61002NYCLHX and experience the difference in power and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN configuration is commonly used for amplification and switching applications, providing versatility in circuit design.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates minimal power loss and high efficiency in switching applications.

Maximum Power Dissipation (Abs): 25 W

High power dissipation capability allows the transistor to handle large loads and operate efficiently under high power conditions.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum collector-emitter voltage rating, this transistor can be used in a wide range of applications that require high voltage handling.

Nominal Transition Frequency (fT): 140 MHz

High transition frequency enables fast switching speeds and high-frequency operation, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT61002NYCLHX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

11 pF

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

PHPT61002NYCLHX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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