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PHPT61010NY

NXP Semiconductors

PHPT61010NY by NXP Semiconductors

PHPT61010NY by NXP is a NPN BJT transistor for switching applications. With hFE of 150, it supports max IC of 10A and VCE of 100V. Its small outline package with gull wing terminals makes it suitable for surface mount designs in automotive electronics.

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4

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1k+

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Vyrian

USA . 7,763 parts In-Stock

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Anansix

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Digiode

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Nova Conductors

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Corohmni

South Africa . 903 parts In-Stock

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$1.900

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903

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AZTECH Wire

Italy . 13,801 parts In-Stock

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Ampacity Inc.

Singapore . 713 parts In-Stock

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One Stop Electronics

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Argo Parts USA

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UNI Independent Distributors

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Corphita

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Authorized Procurement Solutions

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Aranea Global

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Continental Prestige Electronics

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Supply Digital

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Overview

Power up your projects with the PHPT61010NY by NXP Semiconductors! This high-quality Power Bipolar Junction Transistor (BJT) offers unparalleled switching capabilities, making it perfect for a wide range of applications. With a maximum collector-emitter voltage of 100V and a maximum collector current of 10A, this transistor provides reliable performance every time. Trust in NXP Semiconductors' reputation for excellence and choose the PHPT61010NY for all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, ensuring efficient operation and low signal distortion.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to use in different applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring fast response and efficient performance.

Surface Mount: YES

Surface mount capability allows for easy and compact integration onto circuit boards, saving space and reducing assembly time.

Terminal Form: GULL WING

Gull wing terminals are suitable for surface mount applications, providing good mechanical strength and reliable solder connections.

No. of Terminals: 4

Having 4 terminals offers flexibility in connecting the transistor in different circuit configurations.

Minimum DC Current Gain (hFE): 150

High DC current gain ensures amplification of input signals with minimal distortion, improving overall performance.

Maximum Collector-Emitter Voltage: 100 V

High voltage rating allows the transistor to handle larger voltage differences without breakdown, ensuring reliability in various applications.

Max Collector Current (IC): 10 A

High collector current rating enables the transistor to handle a larger load, making it suitable for high-power switching applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and ensures reliable electrical connections, enhancing the durability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time ensures efficient soldering process and minimizes heat stress on the transistor during assembly.

Peak Reflow Temperature °C: 260

High reflow temperature capability allows for reliable soldering process and ensures stable performance under elevated temperature conditions.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability of the transistor for automotive and general electronic applications.

Nominal Transition Frequency (fT): 145 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for various high-performance applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT61010NY attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PHPT61010NY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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