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PHPT61002PYC

NXP Semiconductors

PHPT61002PYC by NXP Semiconductors

PHPT61002PYC from NXP is a PNP BJT designed for switching applications. It features a max collector-emitter voltage of 100V, a min DC current gain (hFE) of 150, and supports surface mount with a compact SO package. Ideal for efficient power management in electronic circuits.

Median Price

$0.268

Lifecycle Status

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7

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1k+

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Chip Stock

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Bristol Electronics

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AZTECH Wire

Italy . 3,068 parts In-Stock

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One Stop Electronics

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Overview

Experience unparalleled performance with the PHPT61002PYC from NXP Semiconductors—your trusted partner in power solutions. This high-quality PNP transistor is designed for efficient switching applications, offering exceptional reliability and durability. With its compact surface-mount design, it seamlessly integrates into your projects, enhancing efficiency while saving precious board space. Trust NXP's legacy of innovation to elevate your electronics to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material ensures robustness and protection against environmental factors, making the BJT reliable in various applications.

Polarity or Channel Type: PNP

The PNP configuration is ideal for applications requiring high-side switching, enhancing versatility in circuit designs.

Configuration: SINGLE

A single configuration simplifies circuit design and integration, ideal for both hobbyist and professional applications.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT provides fast response times essential for efficient control in electronic circuits.

Surface Mount: YES

Surface mount capability allows for compact circuit designs, enabling high-density applications and improving layout flexibility.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into PCBs, promoting efficient use of space.

Terminal Form: GULL WING

Gull wing terminals provide robust mechanical support and ease of soldering, ensuring reliable connections in the assembly process.

No. of Terminals: 4

Having four terminals allows for straightforward connectivity and the versatility to support various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package minimizes board space usage while maintaining high performance, ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 150

A minimum current gain of 150 ensures strong amplification, which is crucial for effective signal processing in switching operations.

Maximum Collector-Emitter Voltage: 100 V

This high voltage rating allows the BJT to be used in applications with substantial power requirements, enhancing its usability in diverse circuits.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties and thermal stability, making the BJT reliable for long-term use.

Maximum Collector Current (IC): 2 A

With a maximum collector current rating of 2 A, this BJT can handle considerable loads, suitable for a wide range of applications.

Terminal Finish: TIN

Tin terminal finish ensures excellent solderability, improving assembly consistency and reliability on PCBs.

Terminal Position: SINGLE

Single terminal position enhances the ease of integration into circuits while maintaining effective performance.

Case Connection: COLLECTOR

Having a collector case connection allows for optimal heat dissipation and improved electrical performance, which is vital in high-current applications.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds ensures that the BJT can endure modern soldering processes without degradation.

Peak Reflow Temperature °C: 260

A high peak reflow temperature tolerance indicates this BJT's resilience to manufacturing processes, ensuring reliability in production.

Reference Standard: IEC-60134

Complying with international standards like IEC-60134 guarantees adherence to quality and safety, helping to instill user confidence.

Nominal Transition Frequency (fT): 125 MHz

With a transition frequency of 125 MHz, this BJT is suitable for applications requiring high-speed switching and amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT61002PYC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PHPT61002PYC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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