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PHPT61003PY

NXP Semiconductors

PHPT61003PY by NXP Semiconductors

PHPT61003PY by NXP is a PNP BJT transistor for switching applications. With hFE of 150, it supports up to 100V VCE and 3A IC. Its SILICON element and GULL WING terminals make it ideal for surface mount designs in automotive electronics.

Median Price

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Lifecycle Status

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5

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1k+

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Chip Stock

USA . 50,000 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 12,357 parts In-Stock

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Ampacity Inc.

Singapore . 509 parts In-Stock

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One Stop Electronics

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Overview

Discover the PHPT61003PY by NXP Semiconductors, a high-quality Power Bipolar Junction Transistor designed for switching applications. This PNP transistor offers exceptional performance and reliability, thanks to the renowned manufacturer's expertise. With a maximum collector-emitter voltage of 100V and a collector current of 3A, this transistor provides excellent value and efficiency for your electronic projects. Whether you're a hobbyist or a professional, the PHPT61003PY delivers the power and performance you need. Experience the difference with NXP Semiconductors' innovative technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, ideal for various electronic applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other PNP components in a circuit, making it versatile and convenient for design and installation.

Configuration: SINGLE

The single configuration simplifies circuit design and implementation, reducing complexity and potential points of failure.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and efficient performance in electronic devices.

No. of Terminals: 4

Having 4 terminals allows for flexibility in connectivity options and can accommodate various circuit designs.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum collector-emitter voltage, this transistor can handle high voltage applications with ease and reliability.

Maximum Collector Current (IC): 3 A

The high maximum collector current rating of 3 A enables the transistor to handle high-power loads effectively.

Terminal Finish: TIN

The TIN terminal finish ensures good conductivity and corrosion resistance, enhancing the longevity and performance of the transistor.

Nominal Transition Frequency (fT): 125 MHz

With a high nominal transition frequency, this transistor is capable of operating at high frequencies, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT61003PY attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PHPT61003PY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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