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PHPT61006NY

NXP Semiconductors

PHPT61006NY by NXP Semiconductors

PHPT61006NY by NXP Semiconductors is a NPN BJT transistor with 140 min hFE, 100V VCE, and 6A IC. Ideal for switching applications, it has a small outline package style and can operate at up to 260°C peak reflow temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Vyrian

USA . 8,104 parts In-Stock

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Digiode

USA . 4,554 parts In-Stock

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Bristol Electronics

USA . 2,558 parts In-Stock

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Dan-Mar Components

USA . 2,558 parts In-Stock

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Anansix

USA . 2,046 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,083 parts In-Stock

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Nova Conductors

Japan . 62 parts In-Stock

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One Stop Electronics

USA . 1,591 parts In-Stock

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$3.050

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AZTECH Wire

Italy . 8,761 parts In-Stock

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Ampacity Inc.

Singapore . 496 parts In-Stock

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Lixinc

USA . 16,946 parts In-Stock

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Argo Parts USA

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Authorized Procurement Solutions

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Corphita

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Supply Digital

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Continental Prestige Electronics

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UNI Independent Distributors

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Aranea Global

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Overview

Elevate your electronic designs with the PHPT61006NY by NXP Semiconductors, a high-quality Power Bipolar Junction Transistor that offers unparalleled reliability and performance. This NPN transistor is perfect for switching applications, providing customers with efficient and effective solutions. With a maximum collector-emitter voltage of 100V and a maximum collector current of 6A, this transistor is a versatile choice for a wide range of projects. Trust NXP Semiconductors to deliver cutting-edge technology that meets the highest industry standards. Experience the difference with the PHPT61006NY.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection to the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

The NPN configuration allows for amplification of signals and reliable switching capabilities.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and precise control of electrical signals.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and integration into circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide reliable and secure solder connections.

No. of Terminals: 4

Simplified connectivity with a manageable number of terminals.

Package Style (Meter): SMALL OUTLINE

Compact size ideal for modern electronic devices where space is limited.

Minimum DC Current Gain (hFE): 140

High current gain ensures efficient signal amplification and reliable performance.

Maximum Collector-Emitter Voltage: 100 V

Ability to handle high voltages, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 6 A

High collector current rating allows for handling of large electrical loads.

Terminal Finish: TIN

Tin finish provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Simplified terminal arrangement for easy integration into circuit designs.

Case Connection: COLLECTOR

The case connection at the collector helps in efficient heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliability during solder reflow processes without compromising performance.

Peak Reflow Temperature °C: 260

Capable of withstanding high temperatures during solder reflow, ensuring durability.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability of the product.

Nominal Transition Frequency (fT): 170 MHz

High transition frequency allows for fast switching speeds and efficient operation in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT61006NY attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PHPT61006NY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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