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PHPT61002NYC

NXP Semiconductors

PHPT61002NYC by NXP Semiconductors

PHPT61002NYC from NXP Semiconductors is an NPN BJT designed for switching applications. It features a max VCEsat of 0.075V, power dissipation of 25W, and operates b/w -55 °C to 175 °C. Ideal for compact electronic designs with high efficiency needs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 7,153 parts In-Stock

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Digiode

USA . 4,876 parts In-Stock

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Anansix

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One Stop Electronics

USA . 834 parts In-Stock

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$5.050

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834

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AZTECH Wire

Italy . 13,282 parts In-Stock

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UNI Independent Distributors

Spain . 4,572 parts In-Stock

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Corphita

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Supply Digital

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Kepictronics

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Overview

Unlock the power of innovation with the PHPT61002NYC from NXP Semiconductors, a leader in high-quality electronic components. This reliable NPN bipolar junction transistor excels in switching applications, ensuring efficient performance in diverse environments. With its robust design and compact package, it delivers exceptional power management, making it ideal for automotive, industrial, and consumer electronics. Choose NXP for unmatched quality and elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides a lightweight yet durable construction, making it suitable for various environments.

Polarity or Channel Type: NPN

As an NPN transistor, this device is ideal for switching applications and amplifications, making it versatile for electronic circuits.

Configuration: SINGLE

Single transistor configuration simplifies integration in designs, reducing size and complexity in circuits.

Transistor Application: SWITCHING

Designed for switching applications, it can efficiently manage control functions within electronic systems.

Surface Mount: YES

Surface mount capability allows for reduced PCB space and improved assembly efficiency, ideal for modern electronic design.

Maximum VCEsat: 0.075 V

Low VCEsat enables better performance and efficiency in switching applications, minimizing power loss.

Package Shape: RECTANGULAR

The rectangular shape facilitates better space utilization on printed circuit boards (PCBs).

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics, improving reliability in assemblies.

No. of Terminals: 4

Having 4 terminals allows for easier connection while ensuring necessary electrical paths for functionality.

Maximum Power Dissipation (Abs): 25 W

A high power dissipation rating means this BJT can handle significant loads, enhancing its versatility in applications.

Package Style (Meter): SMALL OUTLINE

Small outline packaging promotes compact designs and allows for higher density in PCB layouts.

Minimum DC Current Gain (hFE): 100

A minimum hFE of 100 indicates strong amplification capabilities, making it effective for various amplification tasks.

Maximum Operating Temperature: 175 °C

This high operating temperature ensures reliability in demanding environments where thermal management is critical.

Maximum Collector-Base Capacitance: 11 pF

Low capacitance ensures high-frequency performance and effective operation in faster switching applications.

Maximum Collector-Emitter Voltage: 100 V

A high maximum voltage rating allows this transistor to be used in a wider variety of circuits without risk of breakdown.

Transistor Element Material: SILICON

Silicon is a standard material for transistors due to its excellent electrical properties and thermal stability.

Minimum Operating Temperature: -55 °C

Operating down to -55 °C makes this BJT suitable for use in industrial and automotive applications that experience extreme conditions.

Maximum Collector Current (IC): 2 A

With a maximum collector current of 2 A, this transistor can effectively drive various loads in electronic circuits.

Terminal Finish: TIN

Tin-terminal finish ensures good solderability and improves resistance to corrosion, enhancing longevity in applications.

Terminal Position: SINGLE

Single terminal position simplifies configuration and installation, making it easier for circuit designs.

Case Connection: COLLECTOR

Collector connection design allows consistent electrical performance, simplifying integration into larger circuits.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds is optimal for ensuring proper soldering during assembly without damaging the component.

Peak Reflow Temperature (°C): 260

Allows for robust assembly processes, particularly vital in high-temperature soldering applications.

Reference Standard: IEC-60134

Compliance with IEC-60134 assures quality and reliability, ensuring that the transistor meets industry standards.

Nominal Transition Frequency (fT): 140 MHz

A transition frequency of 140 MHz allows for efficient operation in high-speed switching applications, enhancing performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT61002NYC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Base Capacitance:

11 pF

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.075 V

Trade Compliance

PHPT61002NYC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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