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PHPT60415PY

NXP Semiconductors

PHPT60415PY by NXP Semiconductors

PHPT60415PY by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a hFE of 200, VCE of 40V, and IC of 15A. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,471 parts In-Stock

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Anansix

USA . 1,861 parts In-Stock

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1,861

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Digiode

USA . 298 parts In-Stock

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298

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Distributors (Availability)

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AZTECH Wire

Italy . 13,531 parts In-Stock

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$5.087

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$5.087

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Ampacity Inc.

Singapore . 1,619 parts In-Stock

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$28.050

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One Stop Electronics

USA . 1,153 parts In-Stock

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$59.050

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$59.050

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UNI Independent Distributors

Spain . 5,140 parts In-Stock

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Supply Digital

USA . 2,193 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

USA . 152 parts In-Stock

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Overview

Experience the superior performance and reliability of the PHPT60415PY by NXP Semiconductors. Designed with precision and craftsmanship, this Power Bipolar Junction Transistor (BJT) is ideal for switching applications, offering a maximum collector-emitter voltage of 40V and a maximum collector current of 15A. Its PNP configuration and small outline package make it perfect for a wide range of electronic devices. Trust NXP Semiconductors to deliver cutting-edge technology that enhances efficiency and durability in your projects. Elevate your designs with the PHPT60415PY and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components and contributes to overall durability of the product.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, such as in power supplies and amplifiers.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Suitable for surface mount technology, making it easier to integrate into circuit boards.

Maximum Collector-Emitter Voltage: 40 V

Allows for higher voltage handling capacity, increasing the versatility of the product in different circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT60415PY attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PHPT60415PY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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