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PHPT61003NY

NXP Semiconductors

PHPT61003NY by NXP Semiconductors

PHPT61003NY from NXP Semiconductors is an NPN BJT designed for switching applications. It features a max collector-emitter voltage of 100V, a current gain (hFE) of 10, and supports up to 3A collector current. Ideal for compact electronic designs with surface mount capabilities.

Median Price

$0.268

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 75,000 parts In-Stock

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Vyrian

USA . 8,750 parts In-Stock

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Digiode

USA . 3,955 parts In-Stock

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Anansix

USA . 1,822 parts In-Stock

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Bristol Electronics

USA . 270 parts In-Stock

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$0.268

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$0.155

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270

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$0.268

$0.155

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 12,583 parts In-Stock

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$0.270

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One Stop Electronics

USA . 868 parts In-Stock

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$28.050

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868

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A-Z Elektronik GmbH

Germany . 9,000 parts In-Stock

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9,000

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UNI Independent Distributors

Spain . 6,953 parts In-Stock

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Corphita

USA . 4,724 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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Supply Digital

USA . 852 parts In-Stock

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Perfect Parts

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540

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Futuretech Components

Singapore . 237 parts In-Stock

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Overview

Unlock exceptional performance with the PHPT61003NY from NXP Semiconductors, a trusted leader in innovation. This top-tier NPN power BJT ensures reliability and efficiency for your switching applications, featuring a compact design that fits seamlessly into modern electronics. With its robust specifications and surface mount capability, you'll experience enhanced durability and optimized power management, making it the ideal choice for automotive and industrial solutions. Elevate your projects with NXP’s commitment to quality and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body enhances durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications due to their superior performance characteristics in grounding configurations.

Configuration: SINGLE

A single configuration allows for straightforward integration into circuit designs, simplifying layout and implementation.

Transistor Application: SWITCHING

This transistor is optimized for switching, making it ideal for applications like power regulators and signal modulation.

Surface Mount: YES

Surface mount technology allows for compact designs and automated assembly, enhancing production efficiency.

Package Shape: RECTANGULAR

The rectangular shape is designed for efficient space utilization on PCBs, ideal for modern compact electronics.

Terminal Form: GULL WING

Gull wing terminals ensure reliable solder joints and easy accessibility for rework, improving manufacturing quality.

No. of Terminals: 4

With four terminals, this BJT provides versatile connectivity options while maintaining a compact footprint.

Package Style (Meter): SMALL OUTLINE

The small outline package style is perfect for high-density circuit designs, facilitating miniaturization in electronic products.

Minimum DC Current Gain (hFE): 10

A minimum hFE of 10 indicates reasonable amplification ability, making it suitable for various low-power applications.

Maximum Collector-Emitter Voltage: 100 V

The capability to handle up to 100V makes this component suitable for medium voltage applications, adding to its versatility.

Transistor Element Material: SILICON

Silicon transistors are well known for their efficiency and stability, ensuring reliable performance under various conditions.

Maximum Collector Current (IC): 3 A

Being able to handle 3A of collector current allows this transistor to be utilized in higher power applications.

Terminal Finish: TIN

Tin terminal finish provides good corrosion resistance and facilitates soldering, ensuring long-term reliability in various applications.

Terminal Position: SINGLE

A single terminal position simplifies design in PCB layout, allowing for easier integration into existing circuits.

Case Connection: COLLECTOR

Collector case connection is standard for most BJT configurations, promoting efficient thermal management.

Maximum Time At Peak Reflow Temperature: 30 s

The design can withstand reflow soldering processes, making it easier for manufacturers to incorporate into their assembly lines.

Peak Reflow Temperature: 260 °C

Designed to endure higher temperatures at reflow, ensuring robustness during production and operation.

Reference Standard: AEC-Q101; IEC-60134

Compliance with these standards ensures reliability and quality, making it suitable for automotive and industrial applications.

Nominal Transition Frequency (fT): 140 MHz

A transition frequency of 140 MHz indicates good performance in switching applications, suitable for high-speed operations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT61003NY attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PHPT61003NY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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