Loading...

PHPT60603NY

NXP Semiconductors

PHPT60603NY by NXP Semiconductors

PHPT60603NY from NXP Semiconductors is an NPN BJT designed for switching applications. It features a max collector-emitter voltage of 60V, a min DC current gain (hFE) of 200, and supports surface mount with a compact SO package. Ideal for automotive and industrial uses.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,734 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,734

-

-

-

-

Digiode

USA . 2,673 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,673

-

-

-

-

Anansix

USA . 1,325 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,325

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 8,317 parts In-Stock

1+ parts

$7.250

100+ parts

-

1k+ parts

-

10k+ parts

-

8,317

$7.250

-

-

-

One Stop Electronics

USA . 1,328 parts In-Stock

1+ parts

$65.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,328

$65.050

-

-

-

A-Z Elektronik GmbH

Germany . 13,956 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,956

-

-

-

-

UNI Independent Distributors

Spain . 6,925 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,925

-

-

-

-

Authorized Procurement Solutions

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,500

-

-

-

-

Corphita

USA . 3,388 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,388

-

-

-

-

Supply Digital

USA . 1,786 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,786

-

-

-

-

Metaverse IC Inc.

Canada . 600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

600

-

-

-

-

Perfect Parts

USA . 560 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

560

-

-

-

-

Overview

Unlock exceptional performance with the PHPT60603NY from NXP Semiconductors, a trusted name in power solutions. This NPN transistor is designed for seamless switching applications, offering reliability and efficiency that elevate your projects. Its robust construction and advanced engineering ensure superior quality, while the compact surface mount design saves valuable space. Experience unmatched value and performance that meets diverse industry needs, transforming your innovations into reality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and effective protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration is widely used in switching and amplification applications, providing versatility and reliability in electronic circuits.

Configuration: SINGLE

A single configuration allows for simple integration into circuits, facilitating compact designs without compromising functionality.

Transistor Application: SWITCHING

Designed primarily for switching applications, this transistor delivers quick response times and efficient operation in power management.

Surface Mount: YES

Surface mount capability enables automated assembly processes, leading to lower production costs and improved design flexibility.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, allowing for more compact designs and easier layout planning.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering surface area, enhancing reliability and ensuring strong electrical connections.

No. of Terminals: 4

Having four terminals allows for versatile connectivity options, maximizing the transistor's functionality in various configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style contributes to a minimized footprint on the circuit board, which is critical for space-constrained applications.

Minimum DC Current Gain (hFE): 200

A minimum hFE of 200 indicates strong amplification capabilities, making it suitable for low-power switching applications.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60 V, this transistor is well-suited for a range of high-voltage applications while maintaining safety.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material, ensuring reliable performance and availability in the market.

Maximum Collector Current (IC): 3 A

The ability to handle a maximum collector current of 3 A makes this transistor capable of driving substantial loads effectively.

Terminal Finish: TIN

The tin terminal finish enhances solderability and prevents oxidation, ensuring long-term performance and reliability in electronic applications.

Terminal Position: SINGLE

Single terminal position simplifies the connection process on the PCB, reducing assembly complexity.

Case Connection: COLLECTOR

A collector connection configuration optimizes current flow control, which is essential for effective switching operation.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures compatibility with most PCB assembly processes, reducing risk of thermal damage.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C offers compatibility with modern soldering techniques, ensuring reliable thermals in assembly.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards like AEC-Q101 and IEC-60134 provides assurance of quality and reliability, making it suitable for automotive and industrial applications.

Nominal Transition Frequency (fT): 140 MHz

A transition frequency of 140 MHz enables high-speed operation, making this transistor ideal for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PHPT60603NY attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PHPT60603NY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 19