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FZT949QTA

Diodes Incorporated

FZT949QTA by Diodes Incorporated

FZT949QTA by Diodes Inc. is a PNP BJT with max. VCE of 30V and IC of 5.5A, ideal for automotive applications due to AEC-Q101 standard compliance. Featuring hFE of 75 and fT of 100MHz, it's designed for surface mount in small outline packages with Gull Wing terminals.

Median Price

$0.878

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 876 parts In-Stock

1+ parts

$1.330

100+ parts

$0.725

1k+ parts

$0.489

10k+ parts

$0.440

876

$1.330

$0.725

$0.489

$0.440

Verical

USA . 26,000 parts In-Stock

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$0.427

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26,000

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$0.427

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Avnet

USA . 4,000 parts In-Stock

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4,000

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NAC Semi

USA . 19,000 parts In-Stock

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$0.545

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19,000

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$0.545

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ComSIT Distribution GmbH

Germany . 4,816 parts In-Stock

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4,816

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Microchip USA

USA . 172 parts In-Stock

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$3.330

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172

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Kepictronics

USA . 99,000 parts In-Stock

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99,000

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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99,000

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QUARKTWIN TECHNOLOGY LTD

USA . 7,231 parts In-Stock

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7,231

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Northwest PG Solutions

USA . 1,051 parts In-Stock

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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Native Components

USA . 796 parts In-Stock

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796

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Overview

Unleash the power of innovation with the FZT949QTA by Diodes Incorporated. Crafted with precision and expertise, this PNP Power BJT offers unparalleled reliability and performance. Ideal for a wide range of applications, this transistor is designed to meet the highest standards of quality and efficiency. Experience seamless operation and optimized functionality with this small outline package, featuring a collector-emitter voltage of 30V and a collector current of 5.5A. Trust in Diodes Incorporated to deliver cutting-edge technology that exceeds expectations. Elevate your projects with the FZT949QTA today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package durable and resistant to external elements, ensuring the longevity of the product.

Polarity or Channel Type: PNP

PNP polarity provides the ability for the transistor to be used in various circuit configurations, enhancing its versatility.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the transistor easy to integrate into electronic systems.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

Rectangular package shape provides a standard form factor for easy mounting and integration into circuit boards.

No. of Terminals: 4

Four terminals provide sufficient connectivity options for different circuit configurations, offering flexibility in usage.

Minimum DC Current Gain (hFE): 75

Minimum DC current gain of 75 ensures stable and consistent performance in various operating conditions.

Maximum Collector-Emitter Voltage: 30 V

High maximum collector-emitter voltage of 30V allows for handling higher voltages, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material in the transistor element provides high reliability, low noise, and excellent performance characteristics.

Maximum Collector Current (IC): 5.5 A

High maximum collector current of 5.5A enables the transistor to handle large currents without saturation, suitable for power applications.

Terminal Finish: Matte Tin (Sn)

Matte Tin terminal finish ensures good solderability and reliable electrical connections during PCB assembly.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connectivity options, allowing for easy integration into circuit designs.

Case Connection: COLLECTOR

Case connection to the collector simplifies the circuit layout and improves heat dissipation, enhancing the overall performance of the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures reliable solder joints and robust assembly during the manufacturing process.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that the transistor meets automotive-grade reliability and quality requirements.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100MHz indicates fast switching speeds and high-frequency performance, making it suitable for RF and high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT949QTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

75

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT949QTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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