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FZT951

Diodes Incorporated

FZT951 by Diodes Incorporated

FZT951 by Diodes Inc. is a PNP BJT transistor with 60V VCE, 5A IC, and 3W power dissipation. Ideal for switching applications, it has a hFE of 10 and operates up to 150°C. With Gull Wing terminals in a small outline package, it offers high performance in compact designs.

Median Price

$1.327

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 4,890 parts In-Stock

1+ parts

$1.327

100+ parts

$0.736

1k+ parts

$0.634

10k+ parts

-

4,890

$1.327

$0.736

$0.634

-

Newark

USA . 1,029 parts In-Stock

1+ parts

$1.390

100+ parts

$1.040

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-

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1,029

$1.390

$1.040

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Element14

Singapore . 10 parts In-Stock

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-

100+ parts

$0.340

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-

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10

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$0.340

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ABC Electronics Ltd.

UK . 142 parts In-Stock

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142

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ComSIT Distribution GmbH

Germany . 134 parts In-Stock

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134

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Prism Electronics

USA . 29 parts In-Stock

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29

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Mil-Aero Solutions, Inc.

USA . 22 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 8,791 parts In-Stock

1+ parts

$1.000

100+ parts

$0.611

1k+ parts

$0.373

10k+ parts

$0.347

8,791

$1.000

$0.611

$0.373

$0.347

Assy Fe

Spain . 20,000 parts In-Stock

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20,000

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Lixinc

USA . 8,095 parts In-Stock

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8,095

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Native Components

USA . 396 parts In-Stock

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396

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Northwest PG Solutions

USA . 379 parts In-Stock

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379

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Kepictronics

USA . 95 parts In-Stock

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95

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Perfect Parts

USA . 32 parts In-Stock

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32

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Overview

Enhance your power management solutions with the FZT951 from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. The FZT951 belongs to the Power Bipolar Junction Transistors category, ideal for switching applications. Its compact design, high power dissipation, and impressive transition frequency make it a versatile choice for various electronic projects. Trust in Diodes Incorporated to deliver exceptional performance and value with the FZT951 transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic and epoxy material used in the package body provides good insulation and protection for the transistor, ensuring its reliability and longevity.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits and systems that require PNP transistors, expanding the versatility of this product.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and efficient switching capabilities, ideal for various electronic devices and equipment.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this transistor can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating of 60V allows this transistor to be used in circuits with higher voltage requirements, enhancing its versatility.

Maximum Collector Current (IC): 5 A

Capable of handling a maximum collector current of 5A, this transistor is suitable for applications that require high current flow, ensuring reliable performance.

Nominal Transition Frequency (fT): 120 MHz

The high nominal transition frequency of 120MHz indicates that this transistor can operate at high frequencies, making it suitable for high-speed circuitry and applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FZT951 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FZT951 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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