Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Power Bipolar Junction Transistors (BJT) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as power supplies, motor drives, and welding equipment.The Power BJT is a three-layer device that consists of an emitter, base, and collector region. The emitter and collector are heavily doped, while the base region is lightly doped. The power BJT works by controlling the flow of majority charge carriers (electrons or holes) from the emitter to the collector region through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.Power BJTs are designed to handle high current and voltage levels, and have a low on-resistance and high gain. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.Proper selection and use of Power BJTs are critical to ensure safe and reliable operation of power electronics systems. Power BJTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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BDV64BG
Onsemi
BDV64BG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100 V and a max collector current of 10 A. It is commonly used as an amplifier in various applications.
COLLECTOR
10 A
100 V
DARLINGTON WITH BUILT-IN RESISTOR
1000
TO-247
R-PSFM-T3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
PNP
125 W
Not Qualified
Other Transistors
NO
MATTE TIN
THROUGH-HOLE
SINGLE
AMPLIFIER
SILICON
.1 MHz
BDV65BG
BDV65BG by Onsemi is a NPN BJT with 1000 min hFE, 10A max IC, and 125W max power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in resistor. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.
NPN
BDW42G
The Onsemi BDW42G is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 250, and IC of 15A. With a package style of flange mount and operating temperature range from -55 to 150 °C, it offers high performance in various electronic designs.
LEADFORM OPTIONS ARE AVAILABLE
15 A
200 pF
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
250
TO-220AB
-55 Cel
85 W
SWITCHING
4 MHz
3 V
BDW46G
The Onsemi BDW46G is a PNP power BJT with 85W max power dissipation, 80V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 250 and operating temperature up to 150°C, it offers reliable performance in various industrial settings.
80 V
TIN
BDX33BG
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 10 A;
750
70 W
3 MHz
BDX34BG
BDX34BG by Onsemi is a PNP power BJT with 70W max power dissipation, 10A max collector current, and 150°C max operating temperature. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a min hFE of 750 and operates at a max VCE of 80V in a rectangular package style suitable for flange mount installations.
BDX34CG
BDX34CG by Onsemi is a PNP Power BJT with 70W power dissipation, 10A collector current, and 150°C max operating temp. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a max collector-emitter voltage of 100V and min DC current gain of 750 hFE.
BDX54BG
BDX54BG by Onsemi is a PNP power BJT with 60W max power dissipation, 80V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating at up to 150°C, it has a min hFE of 750 and fT of 4MHz.
8 A
60 W
BDX54CG
Onsemi's BDX54CG is a PNP power BJT with 100V VCEO and 8A IC, ideal for amplifier applications. Featuring a built-in diode and resistor, it has a min hFE of 750 and can handle up to 60W power dissipation. With a max operating temperature of 150°C, this transistor is designed in a rectangular package with through-hole terminals.
20 MHz
BF720T3G
BF720T3G by Onsemi is a NPN BJT with 300V VCEO, 0.1A IC, and 60MHz fT. Ideal for power applications, it has a max power dissipation of 1.5W in a small outline package suitable for surface mount technology.
.1 A
300 V
50
TO-261AA
R-PDSO-G4
4
SMALL OUTLINE
260
1.5 W
YES
GULL WING
DUAL
30
60 MHz
BU323ZG
BU323ZG by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. This transistor has a min DC current gain of 500 and operates at temperatures up to 175°C.
350 V
500
175 Cel
150 W
2 MHz
BUL146G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 14 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 6 A;
6 A
400 V
8
100 W
14 MHz
BUL45G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 12 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 5 A;
5 A
7
75 W
12 MHz
BUV21G
BUV21G by Onsemi is a NPN Power BJT with 200V VCE, 40A IC, and 250W Ptot. Ideal for switching applications, it has a hFE of 10 and operates up to 200°C. The transistor's package style is flange mount with a round shape and collector case connection.
40 A
200 V
10
TO-204AE
O-MBFM-P2
e1
2
200 Cel
METAL
ROUND
250 W
TIN SILVER COPPER
PIN/PEG
BOTTOM
8 MHz
BUV22G
BUV22G by Onsemi is a NPN power BJT with 250V VCE, 40A IC, and 250W Ptot. Ideal for switching applications due to its single configuration and high transition frequency of 8MHz. Its metal package body and flange mount style make it suitable for high-power requirements in various electronic systems.
250 V
BUV26G
BUV26G by Onsemi is a NPN Power BJT with 90V VCEO, 20A IC, and 85W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150 °C, it features silicon transistor element material and tin terminal finish.
20 A
90 V
MC1413BDG
MC1413BDG by Onsemi is a NPN power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 1000.
LOGIC LEVEL COMPATIBLE
.5 A
50 V
COMPLEX
R-PDSO-G16
16
-40 Cel
MJ11012G
MJ11012G by Onsemi is a NPN BJT with 200W power dissipation, 60V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and matte tin terminal finish.
30 A
60 V
200
TO-204AA
200 W
MJ11022G
MJ11022G by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. With max. collector-emitter voltage of 250V and max. collector current of 15A, it can handle up to 175W power dissipation. Featuring built-in diode and resistor, this transistor operates at temperatures up to 175°C in a round flange mount package.
100
175 W
MJ11029G
The Onsemi MJ11029G is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It offers a max collector current of 50A, min DC current gain of 400 (hFE), and max power dissipation of 300W. With a max operating temp of 200 °C and Vce of 60V, it features a metal package body suitable for flange mount installations.
50 A
400
300 W
MJ14001G
The Onsemi MJ14001G is a PNP BJT transistor with 60V VCE, 60A IC, and 300W power dissipation. Ideal for switching applications, it has a min hFE of 5 and operates up to 200 °C. The package style is flange mount with a round shape and metal body material.
60 A
5
MJ14002G
The Onsemi MJ14002G is a NPN BJT transistor with 80V VCEO, 60A IC, and 300W Ptot. It is ideal for switching applications due to its single configuration and high power dissipation capability. The transistor's silicon element material and flange mount package make it suitable for high-temperature environments up to 200°C.
MJ15002G
MJ15002G by Onsemi is a PNP BJT transistor with 200W power dissipation, 140V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with round shape and bottom terminal position.
140 V
25
MJ15011G
The Onsemi MJ15011G is a NPN BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with bottom terminal position.
15
MJ15022G
The Onsemi MJ15022G is a NPN BJT transistor with 200V VCEO and 16A IC, ideal for amplifier applications. With a max power dissipation of 250W, it operates up to 200°C. Featuring a single configuration in a round package style, it has a min hFE of 5 and fT of 4MHz.
16 A
MJ15023G
The Onsemi MJ15023G is a PNP BJT transistor with 200V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 5. Its metal package with flange mount style ensures efficient heat dissipation at up to 200°C operating temperature.
MJB41CG
MJB41CG by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has a small outline package and operates up to 150 °C. With a transition frequency of 3MHz, it's suitable for various power control circuits.
R-PSSO-G2
65 W
MJD18002D2T4G
MJD18002D2T4G by Onsemi is a NPN BJT transistor with 450V VCEO, 2A IC, and 50W Ptot. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology. With an hFE of 6 and fT of 13MHz, this transistor operates b/w -65 °C to +150°C.
FREE WHEELING DIODE
2 A
450 V
SINGLE WITH BUILT-IN DIODE
6
-65 Cel
50 W
Tin (Sn)
40
13 MHz
MJD3055G
MJD3055G by Onsemi is a NPN BJT transistor with 60V VCE, 10A IC, and 20W Ptot. Ideal for amplifier applications, it has a hFE of 5, operates up to 150 °C, and comes in a small outline package with Gull Wing terminals.
20 W
MJD350G
MJD350G by Onsemi is a PNP BJT transistor with 300V VCE, 0.5A IC, and 15W power dissipation. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers a min hFE of 30 and tin finish on single terminal.
15 W
MJE13009G
MJE13009G by Onsemi is a NPN BJT transistor with 400V VCEO, 12A IC, and 2W Ptot. Ideal for switching applications due to its high power dissipation capability and low hFE of 6. Packaged in plastic/epoxy with flange mount style, it operates up to 150 °C making it suitable for various industrial uses.
12 A
2 W
MJE172G
MJE172G by Onsemi is a PNP BJT transistor with 80V VCEO, 3A IC, and 1.5W power dissipation. Ideal for switching applications with a min hFE of 12 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.
3 A
12
TO-225AA
50 MHz
MJE180G
MJE180G by Onsemi is a NPN BJT transistor with 3 terminals, capable of handling up to 1.5W power dissipation and 3A collector current. With a min hFE of 12, it's ideal for switching applications at temperatures up to 150°C. The package style is flange mount with matte tin finish, suitable for through-hole mounting in various electronic circuits.
40 V
MJE18002G
MJE18002G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 450V, max. collector current of 2A, and min. DC current gain of 6. It is used for switching applications due to its high power dissipation of 50W and operating temperature up to 150 °C in a flange mount package style.
MJE18004G
MJE18004G by Onsemi is a NPN BJT transistor with 450V VCEO, 5A IC, and 75W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
MJE18004D2G
MJE18004D2G by Onsemi is a NPN BJT transistor with 450V VCE, 5A IC, and 75W Ptot. Ideal for switching applications, it has a hFE of 6 and operates up to 150 °C. Its package style is flange mount with through-hole terminals.
BUILT-IN EFFICIENT ANTISATURATION NETWORK
MJE271G
MJE271G by Onsemi is a PNP power BJT with 100V VCEO, 2A IC, and 15W Ptot. Ideal for high-power applications due to its Darlington configuration and 6MHz fT. Package style is flange mount with through-hole terminals.
DARLINGTON
1500
TO-225
6 MHz
MJE3439G
MJE3439G by Onsemi is a NPN power BJT with 15W Pd, 350V VCEO, and 0.3A IC. Ideal for high-power applications in industrial electronics due to its single configuration and flange mount package style. With a max operating temperature of 150°C, it offers reliable performance in various environments.
.3 A
15 MHz
MJE344G
The Onsemi MJE344G is a NPN BJT transistor with 200V VCEO, 0.5A IC, and 20W Ptot. Ideal for amplifier applications, it has hFE of 30, fT of 15MHz, and operates up to 150°C. The package is rectangular with flange mount style and matte tin finish in a through-hole configuration.
MJE4343G
MJE4343G by Onsemi is a NPN Power BJT with 160V VCE, 16A IC, and 125W Ptot. Ideal for switching applications, it has a single configuration in a rectangular package with through-hole terminals. Operating up to 150°C, it offers a min hFE of 8 and fT of 1MHz for efficient performance.
160 V
1 MHz
MJE4353G
MJE4353G by Onsemi is a PNP BJT transistor with 160V VCEO, 16A IC, and 125W power dissipation. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.
TO-218
MJE521G
MJE521G by Onsemi is a NPN BJT transistor with 40V VCEO, 4A IC, and 40W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package suitable for flange mount. Operating up to 135 °C, it offers a min hFE of 40 and features silicon element material.
4 A
135 Cel
40 W
MJE5850G
MJE5850G by Onsemi is a PNP power BJT with 300V VCE, 8A IC, and 80W Ptot. It features a built-in diode and resistor for switching applications. The transistor has a min hFE of 5 and operates up to 150°C, making it suitable for high-power tasks.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
80 W
MJE5851G
MJE5851G by Onsemi is a PNP BJT with 80W power dissipation, 350V max. collector-emitter voltage, and 8A max. collector current. Ideal for switching applications, it features a single configuration with built-in diode and resistor in a rectangular package suitable for flange mount installations.
MJE700G
MJE700G by Onsemi is a PNP power BJT with 40W max power dissipation, 750 min hFE, and 60V max VCE. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it offers high performance in various electronic designs.
BUILT IN BIAS RESISTOR
MJE702G
MJE702G by Onsemi is a PNP BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.
MJE802G
MJE802G by Onsemi is a NPN BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor. With hFE of 750 and fT of 1MHz, this transistor operates at up to 150 °C in a rectangular package with matte tin finish.
MJE803G
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 1 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;
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