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BDV65BG

Onsemi

BDV65BG by Onsemi

BDV65BG by Onsemi is a NPN BJT with 1000 min hFE, 10A max IC, and 125W max power dissipation. Ideal for amplifier applications due to its Darlington configuration with built-in resistor. The transistor's silicon element material ensures reliable performance at up to 150°C operating temperature.

Median Price

$1.159

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1 parts In-Stock

1+ parts

$0.336

100+ parts

$0.336

1k+ parts

$0.336

10k+ parts

$0.336

1

$0.336

$0.336

$0.336

$0.336

Distrelec

Netherlands . 128 parts In-Stock

1+ parts

$2.573

100+ parts

$1.903

1k+ parts

-

10k+ parts

-

128

$2.573

$1.903

-

-

Verical

USA . 1,460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.178

10k+ parts

$1.050

1,460

-

-

$1.178

$1.050

Rochester

USA . 83 parts In-Stock

1+ parts

-

100+ parts

$1.140

1k+ parts

$0.943

10k+ parts

$0.840

83

-

$1.140

$0.943

$0.840

Flip Electronics (Authorized)

USA . 78 parts In-Stock

1+ parts

-

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-

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78

-

-

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Distributors (In-Stock)

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Digiode

USA . 1,956 parts In-Stock

1+ parts

$0.884

100+ parts

-

1k+ parts

-

10k+ parts

-

1,956

$0.884

-

-

-

Vyrian

USA . 9,639 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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9,639

-

-

-

-

Flip Electronics

USA . 78 parts In-Stock

1+ parts

-

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78

-

-

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Schukat

Germany . 60 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.410

10k+ parts

-

60

-

-

$1.410

-

LIBRA Elektronik GmbH

Germany . 49 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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49

-

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EMSNET

USA . 7 parts In-Stock

1+ parts

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,724 parts In-Stock

1+ parts

$0.838

100+ parts

-

1k+ parts

-

10k+ parts

-

1,724

$0.838

-

-

-

Corohmni

South Africa . 160 parts In-Stock

1+ parts

$0.931

100+ parts

-

1k+ parts

-

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160

$0.931

-

-

-

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.959

100+ parts

$0.873

1k+ parts

$0.786

10k+ parts

-

150

$0.959

$0.873

$0.786

-

Continental Prestige Electronics

USA . 1,813 parts In-Stock

1+ parts

$2.360

100+ parts

$1.730

1k+ parts

$1.660

10k+ parts

-

1,813

$2.360

$1.730

$1.660

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AZTECH Wire

Italy . 227 parts In-Stock

1+ parts

$19.860

100+ parts

-

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227

$19.860

-

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Problanco Electronics

Mexico . 6,463 parts In-Stock

1+ parts

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6,463

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TANS Electronics

Latvia . 4,810 parts In-Stock

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4,810

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Perfect Parts

USA . 3,166 parts In-Stock

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3,166

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SupplyDigital Components

Austria . 2,988 parts In-Stock

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2,988

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Northwest PG Solutions

USA . 1,344 parts In-Stock

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1,344

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Native Components

USA . 499 parts In-Stock

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499

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Kulean Microsystems

USA . 350 parts In-Stock

1+ parts

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350

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UHIMA Technologies

Türkiye . 306 parts In-Stock

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306

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Eastek

USA . 120 parts In-Stock

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120

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GreenTree Electronics

Israel . 30 parts In-Stock

1+ parts

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30

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Cyclops Electronics Ltd (Excess)

UK . 10 parts In-Stock

1+ parts

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10

-

-

-

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Overview

Experience the power of innovation with the BDV65BG by Onsemi, a high-quality Power Bipolar Junction Transistor that delivers exceptional performance in amplifier applications. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor offers customers unparalleled value and reliability. With a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150°C, this transistor is designed to withstand even the most demanding conditions. Trust the BDV65BG to elevate your amplification projects to new heights of excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ensuring long-lasting performance.

Polarity or Channel Type: NPN

Common type of BJT, widely used in electronic circuits.

Configuration: DARLINGTON WITH BUILT-IN RESISTOR

Efficient configuration for amplifier applications, simplifying circuit design.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring high performance.

Package Shape: RECTANGULAR

Easy to mount and integrate into electronic devices.

Terminal Form: THROUGH-HOLE

Traditional and reliable terminal form for easy soldering.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Secure mounting style for stability and heat dissipation.

Minimum DC Current Gain (hFE): 1000

High current gain ensures efficient amplification.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without compromising performance.

Maximum Collector-Emitter Voltage: 100 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Common and reliable material for transistors, ensuring consistent performance.

Maximum Collector Current (IC): 10 A

High collector current rating for handling heavy loads.

Terminal Finish: MATTE TIN

Quality terminal finish for reliable solder connections.

Terminal Position: SINGLE

Simplified terminal configuration for easy installation.

Case Connection: COLLECTOR

Specific connection for efficient current flow and stability.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDV65BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BDV65BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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