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BDV65

STMicroelectronics

BDV65 by STMicroelectronics

STMicroelectronics BDV65 is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 2V and can handle up to 12A collector current. With a power dissipation of 125W, it operates at temperatures up to 150°C, making it suitable for high-power electronic circuits.

Median Price

$3.350

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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TEDSS.com

USA . 2,627 parts In-Stock

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$2.000

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$1.500

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$2.000

$1.500

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DigiKey Marketplace

USA . 615 parts In-Stock

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$2.760

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$2.290

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615

$2.760

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Galco

USA . 3 parts In-Stock

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$3.940

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3

$3.940

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American Microsemiconductor Inc.

USA . 391 parts In-Stock

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$8.730

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391

$8.730

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 4,200 parts In-Stock

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Digiode

USA . 1,394 parts In-Stock

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Anansix

USA . 1,273 parts In-Stock

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Tech-Mark Corp

USA . 255 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 119 parts In-Stock

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Pegasus Components GmbH

Germany . 81 parts In-Stock

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Vyrian

USA . 81 parts In-Stock

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ComSIT Distribution GmbH

Germany . 63 parts In-Stock

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Holdelec - ElecDif-Pro

France . 48 parts In-Stock

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ECAB

Sweden . 24 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 21 parts In-Stock

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LittleDiode

UK . 13 parts In-Stock

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GES GmbH

Germany . 4 parts In-Stock

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IDEA Electronic Components Group

UK . 107 parts In-Stock

1+ parts

$1.702

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$1.532

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107

$1.702

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$1.532

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MKK Technologies

India . 241 parts In-Stock

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$3.200

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241

$3.200

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DigiPath Technology Company

USA . 241 parts In-Stock

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$3.200

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241

$3.200

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Ampacity Inc.

Singapore . 802 parts In-Stock

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$62.050

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802

$62.050

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QUARKTWIN TECHNOLOGY LTD

USA . 13,160 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Microchip USA

USA . 5,573 parts In-Stock

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Corphita

USA . 4,470 parts In-Stock

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Northwest PG Solutions

USA . 2,584 parts In-Stock

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Native Components

USA . 1,656 parts In-Stock

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Perfect Parts

USA . 267 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 119 parts In-Stock

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Glotronic Ltd.

UK . 95 parts In-Stock

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Parana Technologies

USA . 40 parts In-Stock

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$2.035

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$2.035

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Overview

Experience the power of the BDV65 by STMicroelectronics, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector current of 12A and a built-in diode and resistor, this NPN transistor offers reliable performance and efficiency. Whether you're looking to enhance your electronic projects or optimize your industrial processes, the BDV65 provides the perfect solution. Trust in STMicroelectronics' reputation for excellence and innovation, and unlock the full potential of your applications with this versatile component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for a wide range of circuit designs.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration allows for high current gain, while the built-in diode and resistor provide added functionality and convenience in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and efficient performance.

Maximum VCEsat: 2 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, resulting in efficient power conversion and reduced heat generation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards or heat sinks.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering for efficient assembly processes.

No. of Terminals: 3

Three terminals allow for simple interfacing with external components in a circuit.

Maximum Power Dissipation (Abs): 125 W

High power dissipation rating enables this transistor to handle large amounts of power without overheating or failure.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers a secure and stable mounting option for easy integration into various applications.

Maximum Power Dissipation Ambient: 125 W

This transistor can dissipate up to 125 W of power in ambient conditions, ensuring reliable performance in demanding environments.

Minimum DC Current Gain (hFE): 1000

High DC current gain provides efficient amplification of the input signal, making this transistor suitable for low-power applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without sacrificing performance or reliability.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage rating allows this transistor to handle higher voltage levels in a circuit, increasing its versatility.

Transistor Element Material: SILICON

Silicon is a commonly used material for transistors due to its high conductivity and stability, ensuring long-term performance.

Maximum Collector Current (IC): 12 A

High collector current rating enables this transistor to handle large currents, making it suitable for high-power applications.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals provides good conductivity and solderability, ensuring reliable connections in a circuit.

Terminal Position: SINGLE

Single terminal position simplifies the installation and connection process, making this transistor easy to work with in various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDV65 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

125 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BDV65 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

4320-22-269-4486, 4320222694486, 5961-99-730-5679, 5961997305679

NIIN

222694486, 997305679

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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