Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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STMicroelectronics BDV64A is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 2V and can handle up to 12A collector current. With a power dissipation of 125W, it operates at temperatures up to 150 °C, making it suitable for high-power electronic circuits.
Median Price
$6.500
Lifecycle Status
Suppliers In-Stock
14
In-Stock Inventory
1k+
TEDSS.com
1+ parts
100+ parts
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10k+ parts
Digiode
Anansix
Digital Electronic Gebert Verwaltungs UG
Bristol Electronics
Vyrian
Tech-Mark Corp
Electronic Expediters
ECAB
Fibra_Brandt Electronic GMBH
Huijzer Components
ACDS - Activité Composants Distribution Service
LittleDiode
GES GmbH
Native Components
$0.498
Northwest PG Solutions
$0.548
$0.483
IDEA Electronic Components Group
$0.608
$0.547
MKK Technologies
$1.144
DigiPath Technology Company
Component Stockers USA
$99.990
QUARKTWIN TECHNOLOGY LTD
Kepictronics
CPlus Electronics
Glotronic Ltd.
Corphita
Parana Technologies
$0.727
Perfect Parts
Authorized Procurement Solutions
Cyclops Electronics Ltd (Excess)
Provides durability and protection for the transistor, making it suitable for a variety of applications.
PNP transistors are commonly used in high-power switching circuits, making this transistor ideal for such applications.
The Darlington configuration offers high current gain and the built-in diode and resistor provide added convenience and functionality.
Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.
Low VCEsat voltage leads to lower power dissipation and higher efficiency in switching operations.
With a high maximum power dissipation, this transistor can handle high power loads without overheating.
Can withstand high voltage levels, making it suitable for applications where higher voltages are present.
Capable of handling high current levels, allowing for use in applications with significant current requirements.
High DC current gain ensures accurate and consistent amplification of current in switching circuits.
The high nominal transition frequency allows for fast switching speeds, essential in many high-power applications.
Power Bipolar Junction Transistors (BJT) BDV64A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation Ambient:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
Maximum VCEsat:
BDV64A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.
President, CEO
Jean-Marc Chery
President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience
Lorenzo Grandi
President, Sales & Marketing
Jerome Roux
Castelletto
Fabrication
Fab Initiation
1968
Italy
Wafer Capacity
SGFAB AMK 6
2000
Singapore
29,000
AG200
Agrate Brianza
14,000
RST 8
France
Rousset
35,000
Crolles 1
1993
Crolles
30,000
Crolles 2-ext. mod 5
Crolles 2-ext. mod 2
2022
Crolles 2-ext. mod 3
2023
Crolles 2
2004
28,000
1985
SiC Fab
2006
Sweden
Norrköping
10,000
Fab 3
2005
Tours
2,000
Fab 1 & Fab 2
1978
55,000
Fab 2
1997
Catania
SGFAB-AMK 6E
2003
145,000
SGFAB-AMJ 9
1984
152,000
AG300 (R3)
1980
25,000
1987
34,000
AG300
2024
Crolles 2-ext. mod 1
2020
Fab 1 6-inch fab
2013
11,000
SiC 6-inch line
2021
2,500
200mm GaN
2018
SGFAB-AMK 8
2001
Crolles 2- JV Fab
SGFAB-AMK 6
2016
38,125
SGFAB-AMK 2E
2010
20,000
Silicon Carbide A.B.
SiC wafer/EPI Fab
SiC Device Fab
2025
SMBJ18CA
Semitron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
2N7002
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
1N4148
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
Excel (Suzhou) Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM555CN
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
BAV99
Weitronic Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LIS3DHTR
STMicroelectronics
LIS3DHTR by STMicroelectronics is a 16-terminal accelerometer with output range of 0.18-1.62V, ideal for motion sensing applications. Operating temperature ranges from -40 to 85°C, making it suitable for various environments. With a compact square package body of 3x3mm and digital voltage output type, it is commonly used in surface mount designs.
EPCS4SI8N
Intel
EPCS4SI8N by Intel is a small outline flash memory with 512Kx8 organization, operating at 3.3V. It features a max clock frequency of 40MHz and endurance of 100k write/erase cycles. Ideal for industrial applications requiring configuration memory with serial interface and low standby current consumption.
Transys Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 60 V; Maximum Operating Temperature: 150 Cel;
LL4148
Taitron Components
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
1N4148WS
Multicomp Pro
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Infinex
LM358AN
STM32F405RGT6
STM32F405RGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 16 external interrupts, and 196608 RAM bytes. Ideal for industrial applications, it features CAN(2), I2C(3), SPI(3) connectivity options and operates at a max clock frequency of 26 MHz. With low power mode and DMA support, it offers versatile performance in compact dimensions.
Vpt Components
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;
MJD31CT4G
Onsemi
MJD31CT4G by Onsemi is a NPN BJT transistor with 100V VCEO, 3A IC, and 15W Ptot. Ideal for amplifier applications, it has a hFE of 10 and fT of 3MHz. The package is small outline with gull wing terminals, suitable for surface mount assembly.
BD679
Baneasa S A
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
TIP147
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; No. of Elements: 1;
TIP142
Continental Device India
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Transistor Application: AMPLIFIER;
TIP115
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;
TIP32C
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;
MJ15015G
The Onsemi MJ15015G is a PNP BJT transistor with 180W power dissipation, 120V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it has a min hFE of 5 and operates up to 200°C. The package style is flange mount with a round shape and matte tin finish on the bottom terminal.
TIP47
Mospec Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BD140
Samsung
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP127FP
New Jersey Semiconductor Products
PNP; Configuration: SINGLE; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Transistor Element Material: SILICON; No. of Elements: 1;
TIP120TU
TIP120TU by Onsemi is a NPN power BJT with 65W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is designed for high-power tasks in various electronic circuits.
BD243C
Rectron
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD139-16
BD139-16 by NXP Semiconductors is a NPN BJT transistor with 80V VCE, 1.5A IC, and 100 hFE. It is ideal for amplifier applications with a max power dissipation of 8W in a through-hole package style. Operating up to 150°C, it offers a transition frequency of 190MHz for high-performance requirements.
Power Innovations
Power Bipolar Transistors; Surface Mount: NO; Package Shape: RECTANGULAR; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
TIP42C
Forward International Electronics
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP120
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Power Dissipation Ambient: 65 W;
BCP5616H6327XTSA1
Infineon Technologies
Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.
TIP41C
Crimson Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 100 V;
Inchange Semiconductor
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
TIP110
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
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BDV64BG
BDV64BG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100 V and a max collector current of 10 A. It is commonly used as an amplifier in various applications.
BDV64B
PNP; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): .1 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A;
BDV65B
NPN; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; JESD-609 Code: e0;
BDV65BG
NPN; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Collector-Emitter Voltage: 100 V;
BDV64
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): .1 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A;
BDV65
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A; Transistor Application: SWITCHING;
BDV65A
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A; Qualification: Not Qualified;
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A; Maximum Power Dissipation Ambient: 125 W;
Comset Semiconductors
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A; Maximum Collector-Emitter Voltage: 100 V;
BDV65C
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A; Package Shape: RECTANGULAR;
BDV64A
Central Semiconductor
PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A;
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 12 A;
Motorola
NPN; Configuration: DARLINGTON WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Qualification: Not Qualified;
BDV64ALEADFREE
PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSFM-T3;
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Maximum Operating Temperature: 150 Cel; Terminal Position: SINGLE;
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