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BDV64

STMicroelectronics

BDV64 by STMicroelectronics

STMicroelectronics BDV64 is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 2V and can handle up to 12A collector current. With a power dissipation of 125W, it operates at temperatures up to 150 °C, making it suitable for high-power electronic circuits.

Median Price

$2.840

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,101 parts In-Stock

1+ parts

$2.840

100+ parts

-

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4,101

$2.840

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DigiKey Marketplace

USA . 619 parts In-Stock

1+ parts

$2.840

100+ parts

$2.360

1k+ parts

-

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619

$2.840

$2.360

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American Microsemiconductor Inc.

USA . 392 parts In-Stock

1+ parts

$7.900

100+ parts

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392

$7.900

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Digiode

USA . 4,084 parts In-Stock

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4,084

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Anansix

USA . 2,790 parts In-Stock

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2,790

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Prism Electronics

USA . 1,173 parts In-Stock

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1,173

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Resion

USA . 220 parts In-Stock

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220

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Tech-Mark Corp

USA . 215 parts In-Stock

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215

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ACDS - Activité Composants Distribution Service

France . 200 parts In-Stock

1+ parts

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200

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ECAB

Sweden . 186 parts In-Stock

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186

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Fibra_Brandt Electronic GMBH

Germany . 23 parts In-Stock

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23

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LittleDiode

UK . 6 parts In-Stock

1+ parts

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6

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GES GmbH

Germany . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 732 parts In-Stock

1+ parts

$0.490

100+ parts

-

1k+ parts

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10k+ parts

$0.470

732

$0.490

-

-

$0.470

IDEA Electronic Components Group

UK . 382 parts In-Stock

1+ parts

$0.979

100+ parts

-

1k+ parts

$0.881

10k+ parts

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382

$0.979

-

$0.881

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MKK Technologies

India . 2,100 parts In-Stock

1+ parts

$1.841

100+ parts

-

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2,100

$1.841

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DigiPath Technology Company

USA . 2,100 parts In-Stock

1+ parts

$1.841

100+ parts

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2,100

$1.841

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QUARKTWIN TECHNOLOGY LTD

USA . 20,474 parts In-Stock

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20,474

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Kepictronics

USA . 6,800 parts In-Stock

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6,800

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Microchip USA

USA . 4,319 parts In-Stock

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4,319

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Northwest PG Solutions

USA . 2,332 parts In-Stock

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2,332

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Corphita

USA . 1,713 parts In-Stock

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1,713

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Parana Technologies

USA . 881 parts In-Stock

1+ parts

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$1.170

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881

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$1.170

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Perfect Parts

USA . 806 parts In-Stock

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806

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Cyclops Electronics Ltd (Excess)

UK . 200 parts In-Stock

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200

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Overview

Experience the power of innovation with the BDV64 by STMicroelectronics. Crafted with precision and expertise, this high-quality Power Bipolar Junction Transistor (BJT) offers exceptional performance in switching applications. With a maximum VCEsat of 2V and a minimum DC current gain of 1000, this PNP transistor delivers reliable functionality and efficiency. Its durable plastic/epoxy package body material ensures longevity, while the built-in diode and resistor configuration simplifies installation. Trust STMicroelectronics to provide cutting-edge technology that exceeds expectations. Elevate your projects with the BDV64 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Saves space and simplifies design by incorporating necessary components within the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Maximum VCEsat: 2 V

Low VCEsat results in lower power dissipation and improved efficiency in operation.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability allows the transistor to handle demanding applications without overheating.

Maximum Collector-Emitter Voltage: 60 V

Can withstand relatively high voltages, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 12 A

Capable of handling high current loads, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDV64 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

125 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

2 V

Trade Compliance

BDV64 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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