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BDV65A

STMicroelectronics

BDV65A by STMicroelectronics

STMicroelectronics BDV65A is a NPN BJT transistor with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 2V and can handle up to 12A collector current. With a power dissipation of 125W, it operates at temperatures up to 150 °C, making it suitable for high-power electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 19,855 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,917 parts In-Stock

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Anansix

USA . 1,183 parts In-Stock

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Digiode

USA . 441 parts In-Stock

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ECAB

Sweden . 182 parts In-Stock

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ABC Electronics Ltd.

UK . 97 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 67 parts In-Stock

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Manotoh

Italy . 63 parts In-Stock

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Vyrian

USA . 35 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 24 parts In-Stock

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Holdelec - ElecDif-Pro

France . 24 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 21 parts In-Stock

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LittleDiode

UK . 13 parts In-Stock

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Pegasus Components GmbH

Germany . 13 parts In-Stock

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Sinequanon

UK . 9 parts In-Stock

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Digital Electronic Gebert Verwaltungs UG

Germany . 4 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 1,648 parts In-Stock

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$0.490

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$0.470

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$0.490

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$0.470

Northwest PG Solutions

USA . 3,260 parts In-Stock

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$0.665

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$0.665

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IDEA Electronic Components Group

UK . 2,257 parts In-Stock

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$1.738

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$1.564

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MKK Technologies

India . 1,458 parts In-Stock

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$3.268

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DigiPath Technology Company

USA . 1,458 parts In-Stock

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$3.268

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Component Stockers USA

USA . 685 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 12,444 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,410 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,273 parts In-Stock

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CPlus Electronics

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Parana Technologies

USA . 1,146 parts In-Stock

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$2.078

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Corphita

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Assy Fe

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Overview

Upgrade your power management with the BDV65A by STMicroelectronics, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector current of 12A and a minimum DC current gain of 1000, this NPN transistor offers efficient performance and reliable operation. The Darlington configuration, built-in diode, and resistor make it a versatile choice for various electronic projects. Trust STMicroelectronics' expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Experience the value and benefits of the BDV65A for your next project today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration provides high current gain, while the built-in diode and resistor offer added functionality and convenience.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Maximum VCEsat: 2 V

Low VCEsat helps in reducing power losses and improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient PCB layout and space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong and secure connections, suitable for various mounting options.

No. of Terminals: 3

Simple and straightforward 3-terminal design for easy integration and connection.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability ensures reliable operation under demanding conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy and secure mounting onto heat sinks or other surfaces.

Maximum Power Dissipation Ambient: 125 W

Maintaining high power dissipation even in ambient conditions ensures consistent performance.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures effective amplification and switching capabilities.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 80 V

Sufficient collector-emitter voltage rating for reliable operation in various circuit configurations.

Transistor Element Material: SILICON

Silicon material provides good thermal conductivity and efficiency for the transistor.

Maximum Collector Current (IC): 12 A

High collector current rating allows for handling of large currents without damage.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDV65A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

125 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BDV65A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

NSN

5961-33-126-6595, 5961331266595

NIIN

331266595

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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