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BDV64BG

Onsemi

BDV64BG by Onsemi

BDV64BG by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 100 V and a max collector current of 10 A. It is commonly used as an amplifier in various applications.

Median Price

$3.855

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.898

100+ parts

$0.817

1k+ parts

$0.736

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-

100

$0.898

$0.817

$0.736

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Farnell

UK . 453 parts In-Stock

1+ parts

$3.580

100+ parts

$1.670

1k+ parts

$1.340

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453

$3.580

$1.670

$1.340

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Mouser Electronics

USA . 505 parts In-Stock

1+ parts

$4.130

100+ parts

-

1k+ parts

$1.860

10k+ parts

$1.620

505

$4.130

-

$1.860

$1.620

DigiKey

USA . 140 parts In-Stock

1+ parts

$4.130

100+ parts

$2.274

1k+ parts

$1.565

10k+ parts

$1.412

140

$4.130

$2.274

$1.565

$1.412

Chip1Stop

Japan . 267 parts In-Stock

1+ parts

$4.230

100+ parts

$1.770

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-

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267

$4.230

$1.770

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Newark

USA . 773 parts In-Stock

1+ parts

$4.740

100+ parts

$2.880

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$2.470

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773

$4.740

$2.880

$2.470

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Element14

Singapore . 431 parts In-Stock

1+ parts

$6.110

100+ parts

$2.360

1k+ parts

$2.270

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431

$6.110

$2.360

$2.270

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Avnet

USA . 240 parts In-Stock

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240

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Rochester

USA . 151 parts In-Stock

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$1.420

1k+ parts

$1.270

10k+ parts

$1.190

151

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$1.420

$1.270

$1.190

Flip Electronics (Authorized)

USA . 105 parts In-Stock

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105

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Arrow

USA . 25 parts In-Stock

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$1.636

1k+ parts

$1.402

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25

-

$1.636

$1.402

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Verical

USA . 25 parts In-Stock

1+ parts

-

100+ parts

$1.402

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-

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25

-

$1.402

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,175 parts In-Stock

1+ parts

$0.853

100+ parts

-

1k+ parts

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1,175

$0.853

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$1.585

100+ parts

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300

$1.585

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-

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TME

Poland . 175 parts In-Stock

1+ parts

$3.960

100+ parts

$2.040

1k+ parts

$1.860

10k+ parts

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175

$3.960

$2.040

$1.860

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Vyrian

USA . 9,314 parts In-Stock

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9,314

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VNN

France . 1,910 parts In-Stock

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1,910

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NAC Semi

USA . 1,440 parts In-Stock

1+ parts

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100+ parts

$3.690

1k+ parts

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10k+ parts

$3.320

1,440

-

$3.690

-

$3.320

Schukat

Germany . 240 parts In-Stock

1+ parts

-

100+ parts

$3.092

1k+ parts

$2.136

10k+ parts

$2.040

240

-

$3.092

$2.136

$2.040

Flip Electronics

USA . 105 parts In-Stock

1+ parts

-

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105

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LIBRA Elektronik GmbH

Germany . 30 parts In-Stock

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30

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Manotoh

Italy . 10 parts In-Stock

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10

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Holdelec - ElecDif-Pro

France . 2 parts In-Stock

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2

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LittleDiode

UK . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,529 parts In-Stock

1+ parts

$0.368

100+ parts

-

1k+ parts

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10k+ parts

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4,529

$0.368

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Ampacity Inc.

Singapore . 294 parts In-Stock

1+ parts

$0.760

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294

$0.760

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Semicontronic

India . 105 parts In-Stock

1+ parts

$0.760

100+ parts

$0.741

1k+ parts

$0.737

10k+ parts

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105

$0.760

$0.741

$0.737

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Corphita

USA . 590 parts In-Stock

1+ parts

$0.808

100+ parts

-

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590

$0.808

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.898

100+ parts

$0.817

1k+ parts

$0.736

10k+ parts

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100

$0.898

$0.817

$0.736

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$1.553

100+ parts

-

1k+ parts

$1.491

10k+ parts

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500

$1.553

-

$1.491

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Argo Parts USA

USA . 4,971 parts In-Stock

1+ parts

$1.585

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4,971

$1.585

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Corohmni

South Africa . 56 parts In-Stock

1+ parts

$1.614

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56

$1.614

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Continental Prestige Electronics

USA . 2,379 parts In-Stock

1+ parts

$2.790

100+ parts

$1.830

1k+ parts

$1.310

10k+ parts

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2,379

$2.790

$1.830

$1.310

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Lixinc

USA . 16,109 parts In-Stock

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16,109

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SupplyDigital Components

Austria . 5,793 parts In-Stock

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5,793

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Problanco Electronics

Mexico . 4,132 parts In-Stock

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Perfect Parts

USA . 3,235 parts In-Stock

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3,235

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Kulean Microsystems

USA . 3,074 parts In-Stock

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3,074

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TANS Electronics

Latvia . 2,856 parts In-Stock

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2,856

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Eastek

USA . 510 parts In-Stock

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510

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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UHIMA Technologies

Türkiye . 46 parts In-Stock

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46

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Overview

Experience superior performance and reliability with the BDV64BG by Onsemi. As a leading manufacturer in the industry, Onsemi brings you power bipolar junction transistors that are designed for excellence. With its PNP polarity and Darlington configuration, this transistor is perfect for amplifier applications. The BDV64BG offers incredible value to customers with its built-in resistor and high DC current gain of 1000. Its maximum collector-emitter voltage of 100V, maximum power dissipation of 125W, and maximum operating temperature of 150 °C ensure optimum performance even in demanding conditions. Trust Onsemi's BDV64BG for exceptional quality, efficiency, and endurance.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This product's plastic/epoxy package body material offers durability and protection, making it suitable for various applications.

Polarity or Channel Type:

PNP - The PNP configuration allows for efficient signal amplification, making this product ideal for amplifier applications.

Configuration:

DARLINGTON WITH BUILT-IN RESISTOR - The Darlington configuration, combined with the built-in resistor, enhances the transistor's current gain and simplifies circuit design.

Transistor Application:

AMPLIFIER - Designed specifically for amplifier use, this product ensures high-quality and reliable amplification of signals.

Package Shape:

RECTANGULAR - The rectangular package shape enables easy installation and integration into electronic systems.

Terminal Form:

THROUGH-HOLE - With a through-hole terminal form, this transistor provides secure and reliable connections during soldering or PCB assembly.

No. of Elements:

1 - This transistor houses a single element, simplifying circuit design and reducing complexity.

No. of Terminals:

3 - The three terminals offer straightforward connectivity and compatibility with various electronic systems.

Maximum Power Dissipation (Abs):

125 W - The high maximum power dissipation allows for efficient handling of power, ensuring reliable performance under demanding conditions.

Package Style (Meter):

FLANGE MOUNT - The flange mount package style ensures easy mounting and secure attachment in various applications.

Minimum DC Current Gain (hFE):

1000 - With a minimum DC current gain of 1000, this transistor provides high amplification capabilities, making it suitable for applications requiring strong signals.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature of 150°C ensures reliable performance and stability even in demanding environments.

Maximum Collector-Emitter Voltage:

100 V - With a maximum collector-emitter voltage of 100 V, this transistor can handle higher voltages, making it suitable for applications with higher voltage requirements.

Transistor Element Material:

SILICON - The silicon material used in the transistor element offers excellent thermal conductivity and electrical performance for optimal functionality.

Maximum Collector Current (IC):

10 A - With a maximum collector current of 10 A, this transistor can handle higher current levels, making it suitable for applications requiring high power outputs.

Terminal Finish:

MATTE TIN - The matte tin terminal finish enhances solderability and ensures reliable electrical connections.

Terminal Position:

SINGLE - The single terminal position facilitates easy integration and assembly into electronic circuits.

Case Connection:

COLLECTOR - The case connection at the collector allows for efficient heat dissipation and thermal management, enhancing the overall reliability of the transistor.

Nominal Transition Frequency (fT):

0.1 MHz - With a nominal transition frequency of 0.1 MHz, this transistor provides reliable high-frequency signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDV64BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDV64BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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