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BDV67C

Comset Semiconductors

BDV67C by Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 16 A; Package Style (Meter): FLANGE MOUNT;

Median Price

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Lifecycle Status

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8

In-Stock Inventory

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Halfin

Belgium . 155 parts In-Stock

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LittleDiode

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Pegasus Components GmbH

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Manotoh

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Digital Electronic Gebert Verwaltungs UG

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ECAB

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Huijzer Components

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GES GmbH

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Technical Specifications

Power Bipolar Junction Transistors (BJT) BDV67C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Comset Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BDV67C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-33-126-6686, 5961331266686

NIIN

331266686

Manufacturer Highlights

Comset Semiconductors

Comset Semiconductors came into existence with a gap widened by major manufacturers such as Philips when they began discontinuing production of part of their transistors catalog. Comset Semiconductors identified a growing number of unfulfilled demands coming from various industries such as transportation, medical, telecom and security. Amongst them, customers manufacturing embedded electronics equipment or operating in the rail industry wanted to be assured that production and delivery of transistors would remain regular year by year, so that their own production would remain secure. To bridge that gap, Comset Semiconductors began to extend the life cycle of mature but still useful and most popular types of devices, true to the specifications of the original, avoiding the expense of costly redesigns.

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