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MJ14001G

Onsemi

MJ14001G by Onsemi

The Onsemi MJ14001G is a PNP BJT transistor with 60V VCE, 60A IC, and 300W power dissipation. Ideal for switching applications, it has a min hFE of 5 and operates up to 200 °C. The package style is flange mount with a round shape and metal body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 8,584 parts In-Stock

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Digiode

USA . 2,418 parts In-Stock

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A&K Electronics

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Bristol Electronics

USA . 112 parts In-Stock

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AZTECH Wire

Italy . 1,181 parts In-Stock

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$16.790

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QUARKTWIN TECHNOLOGY LTD

USA . 25,190 parts In-Stock

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Problanco Electronics

Mexico . 5,491 parts In-Stock

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Kulean Microsystems

USA . 3,849 parts In-Stock

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SupplyDigital Components

Austria . 2,839 parts In-Stock

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Corphita

USA . 1,109 parts In-Stock

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UHIMA Technologies

Türkiye . 892 parts In-Stock

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TANS Electronics

Latvia . 208 parts In-Stock

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Corohmni

South Africa . 191 parts In-Stock

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Overview

Upgrade your power systems with the MJ14001G by Onsemi. With a reputation for quality and reliability, Onsemi delivers power bipolar junction transistors that excel in switching applications. The MJ14001G offers a maximum power dissipation of 300W, ensuring optimal performance under demanding conditions. Ideal for high-power applications, this PNP transistor provides a maximum collector-emitter voltage of 60V and a maximum collector current of 60A. Trust Onsemi for superior products that deliver unmatched value and benefits to your projects.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides better thermal conductivity, ensuring efficient heat dissipation and improving overall device reliability.

Polarity or Channel Type: PNP

PNP transistors are suitable for high-side switching applications, making them versatile for various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit layout and reduces complexity in design, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and reliable switching performance in electronic circuits.

Maximum Power Dissipation (Abs): 300 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating, making it suitable for high-power applications.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, the transistor can operate reliably in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 60 V

Suitable for medium voltage applications, providing the necessary voltage handling capacity for various circuit requirements.

Maximum Collector Current (IC): 60 A

High collector current rating allows the transistor to handle large current loads, making it suitable for high-current applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ14001G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJ14001G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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