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MJ14002G

Onsemi

MJ14002G by Onsemi

The Onsemi MJ14002G is a NPN BJT transistor with 80V VCEO, 60A IC, and 300W Ptot. It is ideal for switching applications due to its single configuration and high power dissipation capability. The transistor's silicon element material and flange mount package make it suitable for high-temperature environments up to 200°C.

Median Price

$19.060

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 214 parts In-Stock

1+ parts

$19.240

100+ parts

$10.748

1k+ parts

-

10k+ parts

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214

$19.240

$10.748

-

-

Chip1Stop

Japan . 270 parts In-Stock

1+ parts

$40.700

100+ parts

$24.500

1k+ parts

-

10k+ parts

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270

$40.700

$24.500

-

-

Master Electronics

USA . 235 parts In-Stock

1+ parts

-

100+ parts

$15.740

1k+ parts

$15.350

10k+ parts

-

235

-

$15.740

$15.350

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Verical

USA . 234 parts In-Stock

1+ parts

-

100+ parts

$18.881

1k+ parts

-

10k+ parts

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234

-

$18.881

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,595 parts In-Stock

1+ parts

$17.376

100+ parts

-

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1,595

$17.376

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Vyrian

USA . 12,856 parts In-Stock

1+ parts

-

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12,856

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-

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Flip Electronics

USA . 1,500 parts In-Stock

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-

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1,500

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-

-

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IBS Electronics

USA . 235 parts In-Stock

1+ parts

-

100+ parts

$22.075

1k+ parts

$21.528

10k+ parts

-

235

-

$22.075

$21.528

-

ComSIT Distribution GmbH

Germany . 7 parts In-Stock

1+ parts

-

100+ parts

-

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7

-

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ComSIT USA

USA . 7 parts In-Stock

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7

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$1.856

100+ parts

$1.689

1k+ parts

$1.522

10k+ parts

-

1,000

$1.856

$1.689

$1.522

-

Corohmni

South Africa . 220 parts In-Stock

1+ parts

$10.880

100+ parts

-

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220

$10.880

-

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Corphita

USA . 1,936 parts In-Stock

1+ parts

$16.461

100+ parts

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1,936

$16.461

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Lixinc

USA . 18,472 parts In-Stock

1+ parts

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18,472

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QUARKTWIN TECHNOLOGY LTD

USA . 10,778 parts In-Stock

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10,778

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Problanco Electronics

Mexico . 7,610 parts In-Stock

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7,610

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Perfect Parts

USA . 5,728 parts In-Stock

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5,728

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TANS Electronics

Latvia . 5,226 parts In-Stock

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5,226

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A-Z Elektronik GmbH

Germany . 4,965 parts In-Stock

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4,965

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Kulean Microsystems

USA . 1,625 parts In-Stock

1+ parts

-

100+ parts

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1,625

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-

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UHIMA Technologies

Türkiye . 403 parts In-Stock

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403

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Authorized Procurement Solutions

USA . 370 parts In-Stock

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370

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GreenTree Electronics

Israel . 370 parts In-Stock

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370

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Metaverse IC Inc.

Canada . 296 parts In-Stock

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296

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Kepictronics

USA . 166 parts In-Stock

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166

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SupplyDigital Components

Austria . 66 parts In-Stock

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66

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Overview

Enhance your power electronics projects with the MJ14002G by Onsemi. Known for their superior quality and reliability, Onsemi's Power Bipolar Junction Transistors are a trusted choice for professionals worldwide. The MJ14002G offers exceptional performance in switching applications, with a maximum power dissipation of 300W and a maximum collector current of 60A. Its NPN configuration and SILICON transistor element material make it a versatile and efficient choice for a variety of projects. Upgrade your designs with the MJ14002G and experience the value and benefits that Onsemi products provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for consumer applications.

Surface Mount: YES

Being surface mountable allows for easier and more efficient assembly processes in electronic devices.

General IC Type: CONSUMER CIRCUIT

Designed specifically for consumer applications, ensuring optimal performance in everyday electronic devices.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this product can withstand high temperatures, making it suitable for various environments.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this product remains functional in cold climates or refrigerated conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish ensures high conductivity and corrosion resistance for reliable performance.

Maximum Supply Voltage: 3.6 V

The maximum supply voltage of 3.6V allows for compatibility with various power sources, offering flexibility in design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ14002G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJ14002G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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