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MJ14003G

Onsemi

MJ14003G by Onsemi

MJ14003G by Onsemi is a PNP BJT transistor with 80V VCEO, 60A IC, and 300W power dissipation. Ideal for switching applications, it has a min hFE of 5 and operates up to 200 °C. The package style is flange mount with a round shape and metal body material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,487 parts In-Stock

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Vyrian

USA . 1,473 parts In-Stock

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1,473

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SupplyDigital Components

Austria . 7,357 parts In-Stock

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7,357

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Kulean Microsystems

USA . 3,921 parts In-Stock

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Problanco Electronics

Mexico . 3,676 parts In-Stock

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3,676

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TANS Electronics

Latvia . 1,923 parts In-Stock

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1,923

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UHIMA Technologies

Türkiye . 719 parts In-Stock

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719

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Corphita

USA . 300 parts In-Stock

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300

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Corohmni

South Africa . 107 parts In-Stock

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Overview

Unlock the power of reliable and high-quality performance with the Onsemi MJ14003G Power BJT. Manufactured by industry leader Onsemi, this PNP transistor is designed for switching applications, offering a maximum power dissipation of 300W and a maximum collector current of 60A. With its durable metal package body material and flange mount package style, this transistor ensures long-lasting functionality in various environments. Whether you're a hobbyist or a professional, the MJ14003G delivers exceptional value and efficiency, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal package body provides good thermal conductivity, allowing for efficient heat dissipation during operation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product suitable for various switching tasks.

Configuration: SINGLE

Single configuration makes it easier to integrate this transistor into different circuit designs.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in such tasks.

Package Shape: ROUND

Round package shape allows for easier mounting and connection in various circuit designs.

Terminal Form: PIN/PEG

Pin/peg terminal form provides secure connection and easy integration into circuit boards.

Maximum Power Dissipation (Abs): 300 W

High maximum power dissipation capability ensures the transistor can handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and easy installation in electronic devices.

Minimum DC Current Gain (hFE): 5

Minimum DC current gain ensures stable and reliable performance in different circuit configurations.

Maximum Operating Temperature: 200 °C

High maximum operating temperature allows for operation in a wide range of environments without risk of overheating.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating makes this transistor suitable for various voltage applications.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics and reliability for the transistor element.

Maximum Collector Current (IC): 60 A

High maximum collector current rating enables the transistor to handle large current loads efficiently.

Terminal Finish: TIN SILVER COPPER

Terminal finish with tin, silver, and copper provides good conductivity and corrosion resistance for reliable connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy and secure connections in circuit designs.

Case Connection: COLLECTOR

Case connection at the collector terminal offers easy integration and connection in circuit layouts.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures the transistor can withstand high-temperature soldering processes during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ14003G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJ14003G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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