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MJ15011G

Onsemi

MJ15011G by Onsemi

The Onsemi MJ15011G is a NPN BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with bottom terminal position.

Median Price

$15.820

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip1Stop

Japan . 262 parts In-Stock

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Vyrian

USA . 6,069 parts In-Stock

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Digiode

USA . 570 parts In-Stock

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Rapid Electronics

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Corohmni

South Africa . 202 parts In-Stock

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AZTECH Wire

Italy . 1,129 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,207 parts In-Stock

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Problanco Electronics

Mexico . 6,767 parts In-Stock

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Kulean Microsystems

USA . 5,233 parts In-Stock

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Corphita

USA . 2,313 parts In-Stock

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TANS Electronics

Latvia . 1,620 parts In-Stock

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SupplyDigital Components

Austria . 773 parts In-Stock

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UHIMA Technologies

Türkiye . 256 parts In-Stock

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Component Stockers USA

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Overview

Unleash the power of the MJ15011G by Onsemi, a top-quality Power Bipolar Junction Transistor that promises reliability and efficiency. Manufactured by Onsemi, a trusted brand known for superior products, this NPN transistor is perfect for switching applications. With a maximum collector-emitter voltage of 250 V and a maximum power dissipation of 200 W, this transistor delivers exceptional performance. Whether you're working on industrial machinery or electronic projects, the MJ15011G offers unmatched value and benefits to customers looking for a high-performance solution. Elevate your projects with the MJ15011G and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: METAL

The metal body material provides good heat dissipation, allowing the transistor to operate at high power levels without overheating.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor a suitable choice for applications requiring fast switching speeds.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast response times.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into circuit designs.

No. of Terminals: 2

With only 2 terminals, this transistor is simple to use and requires minimal connections in the circuit.

Maximum Power Dissipation (Abs): 200 W

The high maximum power dissipation rating allows this transistor to handle high power levels reliably.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a secure and stable mounting option for the transistor in various applications.

Minimum DC Current Gain (hFE): 15

With a minimum DC current gain of 15, this transistor offers consistent performance and reliability in amplification applications.

Maximum Operating Temperature: 200 °C

The high maximum operating temperature ensures that the transistor can operate reliably in a wide range of environments.

Maximum Collector-Emitter Voltage: 250 V

The high maximum collector-emitter voltage rating provides flexibility in circuit design and helps protect the transistor from voltage spikes.

Transistor Element Material: SILICON

Silicon is a common and reliable transistor element material that offers good performance and durability.

Maximum Collector Current (IC): 10 A

With a high maximum collector current rating, this transistor can handle high current loads effectively.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and solderability for reliable connections in the circuit.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to mount and connect the transistor in a circuit design.

Case Connection: COLLECTOR

The collector case connection simplifies the circuit layout and makes it easier to design and connect the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures that the transistor can withstand the solder reflow process during assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ15011G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJ15011G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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