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MJE700G

Onsemi

MJE700G by Onsemi

MJE700G by Onsemi is a PNP power BJT with 40W max power dissipation, 750 min hFE, and 60V max VCE. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it offers high performance in various electronic designs.

Median Price

$0.388

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 8,555 parts In-Stock

1+ parts

$0.388

100+ parts

$0.212

1k+ parts

$0.164

10k+ parts

$0.130

8,555

$0.388

$0.212

$0.164

$0.130

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.198

100+ parts

-

1k+ parts

-

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650

$0.198

-

-

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TME

Poland . 269 parts In-Stock

1+ parts

$0.310

100+ parts

$0.230

1k+ parts

-

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-

269

$0.310

$0.230

-

-

Digiode

USA . 1,405 parts In-Stock

1+ parts

$0.369

100+ parts

-

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1,405

$0.369

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Vyrian

USA . 9,694 parts In-Stock

1+ parts

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9,694

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Mil-Aero Solutions, Inc.

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Velocity Electronics

USA . 8 parts In-Stock

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8

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Distributors (Availability)

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Corohmni

South Africa . 117 parts In-Stock

1+ parts

$0.190

100+ parts

-

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117

$0.190

-

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Argo Parts USA

USA . 4,314 parts In-Stock

1+ parts

$0.198

100+ parts

-

1k+ parts

-

10k+ parts

$0.192

4,314

$0.198

-

-

$0.192

Ampacity Inc.

Singapore . 8,501 parts In-Stock

1+ parts

$0.330

100+ parts

-

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8,501

$0.330

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Corphita

USA . 2,448 parts In-Stock

1+ parts

$0.349

100+ parts

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2,448

$0.349

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Continental Prestige Electronics

USA . 8,555 parts In-Stock

1+ parts

$0.388

100+ parts

$0.212

1k+ parts

$0.140

10k+ parts

$0.125

8,555

$0.388

$0.212

$0.140

$0.125

AZTECH Wire

Italy . 1,044 parts In-Stock

1+ parts

$13.010

100+ parts

-

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1,044

$13.010

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Component Stockers USA

USA . 451 parts In-Stock

1+ parts

$99.990

100+ parts

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451

$99.990

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Perfect Parts

USA . 8,071 parts In-Stock

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8,071

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Kepictronics

USA . 3,635 parts In-Stock

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3,635

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Metaverse IC Inc.

Canada . 2,300 parts In-Stock

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2,300

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Kulean Microsystems

USA . 2,162 parts In-Stock

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2,162

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.194

1k+ parts

$0.188

10k+ parts

$0.184

1,000

-

$0.194

$0.188

$0.184

UHIMA Technologies

Türkiye . 883 parts In-Stock

1+ parts

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883

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TANS Electronics

Latvia . 791 parts In-Stock

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791

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Problanco Electronics

Mexico . 653 parts In-Stock

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653

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SupplyDigital Components

Austria . 209 parts In-Stock

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209

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Overview

Experience the cutting-edge technology of the MJE700G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality products that are sure to exceed your expectations. The MJE700G falls under the category of Power Bipolar Junction Transistors (BJT) and is perfect for amplifier applications. With its unique Darlington configuration and built-in diode and resistor, this transistor offers unparalleled performance and reliability. Upgrade your electronic projects with the MJE700G and discover the value it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications and amplifiers, making this transistor suitable for such tasks.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplifies circuit design and saves space, making it an efficient choice for amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Maximum Power Dissipation (Abs): 40 W

Can handle high power levels without overheating, making it reliable for demanding applications.

Maximum Operating Temperature: 150 °C

Operates efficiently even at high temperatures, ensuring stability and reliability in harsh environments.

Minimum DC Current Gain (hFE): 750

High DC current gain results in better amplification of signals, making it suitable for amplifier applications.

Maximum Collector-Emitter Voltage: 60 V

Can withstand relatively high voltages, ensuring reliable performance in voltage-sensitive applications.

Maximum Collector Current (IC): 4 A

Capable of handling high current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 1 MHz

High transition frequency allows for efficient switching and amplification of high-frequency signals, making it ideal for amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE700G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE700G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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