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MJE702

Onsemi

MJE702 by Onsemi

MJE702 by Onsemi is a PNP BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.

Median Price

$0.483

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 390 parts In-Stock

1+ parts

$0.483

100+ parts

$0.454

1k+ parts

$0.411

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390

$0.483

$0.454

$0.411

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Distributors (In-Stock)

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Digiode

USA . 4,603 parts In-Stock

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$0.459

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4,603

$0.459

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American Microsemiconductor Inc.

USA . 71 parts In-Stock

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$10.750

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71

$10.750

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Anansix

USA . 3,975 parts In-Stock

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3,975

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Vyrian

USA . 2,822 parts In-Stock

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2,822

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Sogenti Electronics

Canada . 875 parts In-Stock

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875

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Mil-Aero Solutions, Inc.

USA . 834 parts In-Stock

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834

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Electronic Expediters

USA . 380 parts In-Stock

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380

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MISTER SPROCKETS

USA . 194 parts In-Stock

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194

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Semi Source

USA . 43 parts In-Stock

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43

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Fibra_Brandt Electronic GMBH

Germany . 33 parts In-Stock

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LittleDiode

UK . 2 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 5,719 parts In-Stock

1+ parts

$0.435

100+ parts

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5,719

$0.435

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Corohmni

South Africa . 146 parts In-Stock

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$0.483

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146

$0.483

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IDEA Electronic Components Group

UK . 22 parts In-Stock

1+ parts

$1.019

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$0.917

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22

$1.019

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$0.917

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MKK Technologies

India . 2,332 parts In-Stock

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$1.917

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2,332

$1.917

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DigiPath Technology Company

USA . 2,332 parts In-Stock

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$1.917

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2,332

$1.917

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GreenTree Electronics

Israel . 21,000 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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SupplyDigital Components

Austria . 7,911 parts In-Stock

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TANS Electronics

Latvia . 6,524 parts In-Stock

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Kulean Microsystems

USA . 5,338 parts In-Stock

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5,338

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Problanco Electronics

Mexico . 5,111 parts In-Stock

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Supply Digital

USA . 2,495 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,152 parts In-Stock

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2,152

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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701

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Parana Technologies

USA . 79 parts In-Stock

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$1.219

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79

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$1.219

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Assy Fe

Spain . 53 parts In-Stock

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53

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Overview

Enhance your amplifier performance with the MJE702 by Onsemi. This Power BJT offers high-quality construction and a reliable Darlington configuration with a built-in diode and resistor. Perfect for amplification applications, this PNP transistor provides a maximum collector current of 4A and a minimum DC current gain of 750, ensuring optimal performance. With a maximum power dissipation of 40W and a maximum operating temperature of 150 °C, the MJE702 delivers exceptional value and efficiency to every customer. Upgrade your amplifier today with the superior quality of Onsemi's MJE702.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The PLASTIC/EPOXY material used in the package provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: PNP

The PNP polarity makes this transistor suitable for applications where PNP transistors are required, providing flexibility in circuit design.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The DARLINGTON configuration with built-in diode and resistor simplifies circuit design and can enhance performance in certain applications.

Transistor Application: AMPLIFIER

Being specifically designed for amplification applications, this transistor is optimized for delivering high gain and low noise in amplifier circuits.

Package Shape: RECTANGULAR

The RECTANGULAR package shape allows for easier and more efficient PCB placement and mounting of the transistor.

Maximum Power Dissipation (Abs): 40 W

With a maximum power dissipation of 40 W, this transistor can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 80 V

The 80 V maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels, increasing versatility.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high current levels, making it suitable for applications requiring high power output.

Nominal Transition Frequency (fT): 1 MHz

The 1 MHz nominal transition frequency indicates the speed at which the transistor can switch states, allowing for high-frequency operation in certain applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE702 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE702 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-071-5262, 5961010715262, 5961-14-396-7965, 5961143967965

NIIN

010715262, 143967965

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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