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MJE702G

Onsemi

MJE702G by Onsemi

MJE702G by Onsemi is a PNP BJT with 40W power dissipation, 80V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

Median Price

$0.430

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 399 parts In-Stock

1+ parts

$0.531

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$0.430

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$0.398

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399

$0.531

$0.430

$0.398

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Rochester

USA . 3,681 parts In-Stock

1+ parts

-

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$0.254

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$0.211

10k+ parts

$0.188

3,681

-

$0.254

$0.211

$0.188

Flip Electronics (Authorized)

USA . 1,000 parts In-Stock

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Verical

USA . 399 parts In-Stock

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$0.430

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$0.398

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399

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$0.430

$0.398

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Distributors (In-Stock)

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Digiode

USA . 1,069 parts In-Stock

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$0.348

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1,069

$0.348

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Nova Conductors

Japan . 28 parts In-Stock

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$0.376

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28

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Vyrian

USA . 6,275 parts In-Stock

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DigiKey Marketplace

USA . 1,500 parts In-Stock

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Flip Electronics

USA . 1,000 parts In-Stock

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Diverse Electronics

Canada . 100 parts In-Stock

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100

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LittleDiode

UK . 9 parts In-Stock

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Ampacity Inc.

Singapore . 2,026 parts In-Stock

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$0.311

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$0.311

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Corphita

USA . 1,506 parts In-Stock

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$0.329

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1,506

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Corohmni

South Africa . 168 parts In-Stock

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$0.366

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168

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Netroflash

USA . 1,000 parts In-Stock

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$0.376

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$0.376

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AZTECH Wire

Italy . 904 parts In-Stock

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$21.670

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904

$21.670

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Problanco Electronics

Mexico . 6,489 parts In-Stock

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6,489

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Kulean Microsystems

USA . 6,146 parts In-Stock

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Perfect Parts

USA . 4,866 parts In-Stock

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Kepictronics

USA . 4,500 parts In-Stock

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4,500

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TANS Electronics

Latvia . 3,614 parts In-Stock

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SupplyDigital Components

Austria . 2,607 parts In-Stock

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UHIMA Technologies

Türkiye . 602 parts In-Stock

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602

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Overview

Elevate your amplification projects with the MJE702G by Onsemi, a top-tier Power Bipolar Junction Transistor (BJT) designed for superior performance. Crafted with precision and expertise by Onsemi, this PNP transistor features a Darlington configuration with a built-in diode and resistor, making it ideal for amplifier applications. With a maximum power dissipation of 40W and a high DC current gain of 750, this transistor offers unparalleled reliability and efficiency. Trust in Onsemi's reputation for quality as you experience the value and benefits of the MJE702G in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-power applications, making this transistor suitable for amplifier circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration ensures high current gain, while the built-in diode and resistor add convenience for circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Maximum Power Dissipation (Abs): 40 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 80 V

The high maximum voltage rating allows for versatile use in different voltage circuits.

Minimum DC Current Gain (hFE): 750

The high current gain ensures efficient amplification of signals in the circuit.

Maximum Collector Current (IC): 4 A

With a high collector current rating, this transistor can handle large current flows in the circuit.

Nominal Transition Frequency (fT): 1 MHz

The high transition frequency allows for fast switching speeds in the transistor, ideal for amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE702G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE702G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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