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MJE700

Onsemi

MJE700 by Onsemi

MJE700 by Onsemi is a PNP BJT with 40W power dissipation, 750 min hFE, and 60V VCE. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating at up to 150 °C, it has a peak reflow temperature of 235°C and transition frequency of 1MHz.

Median Price

$1.238

Lifecycle Status

Suppliers In-Stock

37

In-Stock Inventory

1k+

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Rochester

USA . 5,000 parts In-Stock

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$0.290

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$0.280

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$0.280

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Adafruit Industries

USA . 100 parts In-Stock

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$2.163

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Freelance Electronics

USA . 5 parts In-Stock

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$0.261

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TEDSS.com

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Digiode

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DF Sales Co.

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Global Solutions Electronics Company

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Ace Electronics

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Forefront Electronics and Design

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Vyrian

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Bristol Electronics

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MISTER SPROCKETS

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Electronic Expediters

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Fibra_Brandt Electronic GMBH

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ABC Electronics Ltd.

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Semi Source

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Inventory MP

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Odyssey Electronics LTD

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Resion

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Manotoh

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Velocity Electronics

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Flex Direct, LLC

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PUI

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LittleDiode

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M&R Communications

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LWI Electronics Inc

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First Choice Components Inc.

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Distributors (Availability)

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Corphita

USA . 2,823 parts In-Stock

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$0.261

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Corohmni

South Africa . 478 parts In-Stock

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IDEA Electronic Components Group

UK . 409 parts In-Stock

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$1.255

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$1.129

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$2.076

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MKK Technologies

India . 2,052 parts In-Stock

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DigiPath Technology Company

USA . 2,052 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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TANS Electronics

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SupplyDigital Components

Austria . 6,388 parts In-Stock

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Problanco Electronics

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Assy Fe

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Perfect Parts

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Kulean Microsystems

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Supply Digital

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Parana Technologies

USA . 332 parts In-Stock

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UHIMA Technologies

Türkiye . 240 parts In-Stock

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GreenTree Electronics

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Overview

Unleash the power of innovation with the MJE700 by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unrivaled performance and reliability. Ideal for amplifier applications, this PNP transistor boasts a Darlington configuration with a built-in diode and resistor for seamless integration. Its high DC current gain and maximum collector-emitter voltage provide optimal functionality, while its flange mount package ensures easy installation. Elevate your projects with the MJE700 and experience unparalleled quality and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where positive voltage control is required.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplified circuit design with built-in components for increased efficiency.

Transistor Application: AMPLIFIER

Specifically designed for amplification circuits, ensuring optimal performance.

Package Shape: RECTANGULAR

Space-efficient design for easy integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Solderable terminals for secure and stable connections.

No. of Terminals: 3

Simple and straightforward connection setup for ease of use.

Maximum Power Dissipation (Abs): 40 W

Capable of handling high power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Easy mounting option for secure positioning in electronic circuits.

Minimum DC Current Gain (hFE): 750

High current gain for efficient signal amplification.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for extended operation.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications requiring relatively low voltage capabilities.

Transistor Element Material: SILICON

Silicon material provides reliable and consistent performance.

Maximum Collector Current (IC): 4 A

High collector current rating for handling larger electrical loads.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead finish for enhanced conductivity and corrosion resistance.

Terminal Position: SINGLE

Simplified terminal layout for easy installation and connections.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering process during assembly.

Peak Reflow Temperature °C: 235

Optimal reflow temperature for reliable solder joints.

Nominal Transition Frequency (fT): 1 MHz

High transition frequency for fast signal switching capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE700 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE700 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-028-9799, 5961010289799

NIIN

010289799

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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