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MJE703

Onsemi

MJE703 by Onsemi

The Onsemi MJE703 is a PNP BJT with Darlington configuration, 40W power dissipation, and 80V max collector-emitter voltage. Ideal for amplifier applications, it has a min hFE of 750, operates up to 150°C, and features a built-in diode and resistor.

Median Price

$9.800

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 3 parts In-Stock

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Vyrian

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Anansix

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PUI

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Zilex Electronics Inc.

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Chip Stock

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Fibra_Brandt Electronic GMBH

Germany . 213 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 172 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Standard Data Resources

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R&J Components

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Mil-Aero Solutions, Inc.

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Bristol Electronics

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ACDS - Activité Composants Distribution Service

France . 15 parts In-Stock

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LittleDiode

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Huijzer Components

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IDEA Electronic Components Group

UK . 1,143 parts In-Stock

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$1.423

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$1.281

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MKK Technologies

India . 2,193 parts In-Stock

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$2.676

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DigiPath Technology Company

USA . 2,193 parts In-Stock

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$2.676

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Corohmni

South Africa . 388 parts In-Stock

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$9.800

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Component Stockers USA

USA . 520 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 22,409 parts In-Stock

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Kulean Microsystems

USA . 2,972 parts In-Stock

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TANS Electronics

Latvia . 2,907 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 2,655 parts In-Stock

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Supply Digital

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Parana Technologies

USA . 1,931 parts In-Stock

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SupplyDigital Components

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UHIMA Technologies

Türkiye . 499 parts In-Stock

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Assy Fe

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Aranea Global

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Overview

Upgrade your electronics with the MJE703 by Onsemi! This power bipolar junction transistor offers unparalleled quality and performance, thanks to Onsemi's reputation for excellence in manufacturing. Ideal for amplifier applications, this PNP transistor boasts a darlington configuration with a built-in diode and resistor. With a maximum power dissipation of 40W and a collector current of 4A, the MJE703 ensures reliable and efficient operation. Experience the value and benefits of this high-quality component in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package body material provides good insulation and protection for the internal components of the transistor, ensuring reliability and durability.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into existing PNP transistor circuits, making it a versatile choice for various applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and built-in diode and resistor provide protection and convenience in circuit design, saving additional components.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability in amplification circuits.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into circuit boards, making installation simple and efficient.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and easy soldering, ensuring a reliable and stable connection in electronic circuits.

Maximum Power Dissipation (Abs): 40 W

High maximum power dissipation rating of 40W allows for reliable operation under high power conditions, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting and heat dissipation, ensuring stable operation even under high temperature conditions.

Minimum DC Current Gain (hFE): 750

High minimum DC current gain ensures consistent and reliable performance in amplification circuits, allowing for precise control over signal amplification.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C enables reliable operation in a wide range of temperature conditions, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating of 80V provides ample voltage headroom for protection against voltage spikes, ensuring robust performance in circuit designs.

Transistor Element Material: SILICON

Silicon transistor element material offers high reliability and performance, ensuring stable operation over a long period of time.

Maximum Collector Current (IC): 4 A

High maximum collector current rating of 4A allows for reliable operation under high current loads, making it suitable for power applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good conductivity and solderability, ensuring a secure and stable connection in electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it easy to integrate into circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature of 30 seconds ensures reliable soldering and prevents damage to the transistor during assembly.

Peak Reflow Temperature °C: 235

High peak reflow temperature of 235°C enables reliable soldering and ensures stable connections in electronic circuits.

Nominal Transition Frequency (fT): 1 MHz

High nominal transition frequency of 1MHz allows for fast switching and amplification, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE703 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE703 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-467-1796, 5961004671796

NIIN

004671796

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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