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MJE700T

Onsemi

MJE700T by Onsemi

MJE700T by Onsemi is a PNP power BJT with 50W max power dissipation, 60V max collector-emitter voltage, and 4A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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DF Sales Co.

USA . 45 parts In-Stock

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DF Sales Co.

USA . 45 parts In-Stock

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Digiode

USA . 758 parts In-Stock

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Vyrian

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Prism Electronics

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PUI

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Electronic Expediters

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Corohmni

South Africa . 337 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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TANS Electronics

Latvia . 5,718 parts In-Stock

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Kulean Microsystems

USA . 2,019 parts In-Stock

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Corphita

USA . 1,829 parts In-Stock

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Problanco Electronics

Mexico . 1,367 parts In-Stock

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UHIMA Technologies

Türkiye . 733 parts In-Stock

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SupplyDigital Components

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Overview

Boost your electronics projects with the MJE700T power transistor by Onsemi! Manufactured with top-notch quality and expertise, this PNP Darlington transistor with a built-in diode and resistor is perfect for amplifier applications. With a maximum power dissipation of 50W and a high DC current gain of 750, this transistor offers unbeatable value and performance. Upgrade your designs today with the MJE700T for reliable and efficient operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications, making this transistor suitable for amplifier circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain, while the built-in diode and resistor simplify circuit design and save space.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in those circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection in circuit boards.

Maximum Power Dissipation: 50 W

High power dissipation capability allows for handling large amounts of power without overheating.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures efficient amplification of signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can operate reliably in a variety of environments.

Maximum Collector-Emitter Voltage: 60 V

Suitable for applications where the collector-emitter voltage does not exceed 60V.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, making it suitable for high power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and assembly.

Case Connection: COLLECTOR

Case connected to collector terminal for easy heat dissipation.

Nominal Transition Frequency (fT): 1 MHz

High cutoff frequency allows for efficient amplification of high-frequency signals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE700T attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

60 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE700T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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