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MJE703G

Onsemi

MJE703G by Onsemi

MJE703G by Onsemi is a PNP BJT with 40W power dissipation, 750 min hFE, and 80V max collector-emitter voltage. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals.

Median Price

$0.447

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,938 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.380

10k+ parts

-

9,938

-

-

$0.380

-

Rochester

USA . 8,417 parts In-Stock

1+ parts

-

100+ parts

$0.447

1k+ parts

$0.371

10k+ parts

$0.331

8,417

-

$0.447

$0.371

$0.331

Future Electronics

Canada . 1,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.920

10k+ parts

$0.900

1,010

-

-

$0.920

$0.900

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 820 parts In-Stock

1+ parts

$0.348

100+ parts

-

1k+ parts

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820

$0.348

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Vyrian

USA . 2,178 parts In-Stock

1+ parts

$0.366

100+ parts

-

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2,178

$0.366

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DigiKey Marketplace

USA . 9,939 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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9,939

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-

-

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IBS Electronics

USA . 1,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.290

10k+ parts

$1.262

1,010

-

-

$1.290

$1.262

NAC Semi

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.700

10k+ parts

-

1,000

-

-

$1.700

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TME

Poland . 587 parts In-Stock

1+ parts

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587

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Cyclops Electronics Ltd

UK . 383 parts In-Stock

1+ parts

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383

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Corel Iberica Componentes, S.L.

Spain . 334 parts In-Stock

1+ parts

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100+ parts

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334

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Chip Stock

USA . 245 parts In-Stock

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245

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 135 parts In-Stock

1+ parts

$0.329

100+ parts

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135

$0.329

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Corohmni

South Africa . 461 parts In-Stock

1+ parts

$0.366

100+ parts

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461

$0.366

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Continental Prestige Electronics

USA . 9,939 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.348

10k+ parts

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9,939

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-

$0.348

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TANS Electronics

Latvia . 5,358 parts In-Stock

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5,358

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SupplyDigital Components

Austria . 5,142 parts In-Stock

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5,142

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Kulean Microsystems

USA . 3,765 parts In-Stock

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3,765

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Perfect Parts

USA . 1,501 parts In-Stock

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1,501

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Problanco Electronics

Mexico . 1,468 parts In-Stock

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1,468

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Assy Fe

Spain . 334 parts In-Stock

1+ parts

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334

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UHIMA Technologies

Türkiye . 47 parts In-Stock

1+ parts

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47

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Overview

Enhance your amplifier projects with the MJE703G Power BJT by Onsemi. Manufactured to the highest quality standards, this PNP transistor offers a Darlington configuration with a built-in diode and resistor, providing increased efficiency and reliability. Ideal for amplifier applications, this transistor boasts a high DC current gain of 750 and a maximum power dissipation of 40W. Trust Onsemi's expertise in semiconductor technology and elevate your projects with the MJE703G, delivering exceptional performance and value to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, making the transistor easy to handle and install.

Polarity or Channel Type: PNP

Suitable for amplification applications and can be easily used in circuits requiring PNP transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Provides higher current gain due to Darlington configuration and includes built-in diode and resistor for added functionality.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in signal boosting circuits.

Maximum Power Dissipation: 40 W

Can handle high power dissipation levels, making it suitable for applications requiring high power output.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without degrading performance, ensuring reliability in various operating conditions.

Maximum Collector-Emitter Voltage: 80 V

Supports high collector-emitter voltage levels, making it suitable for applications with varying voltage requirements.

Maximum Collector Current: 4 A

Capable of handling high collector currents, ideal for applications requiring high current amplification.

Minimum DC Current Gain: 750

High DC current gain ensures stable and reliable amplification of signals, making it suitable for precision applications.

Nominal Transition Frequency: 1 MHz

High transition frequency allows for fast switching speeds, ideal for applications requiring quick signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE703G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-225

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE703G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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