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MJE18004G

Onsemi

MJE18004G by Onsemi

MJE18004G by Onsemi is a NPN BJT transistor with 450V VCEO, 5A IC, and 75W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$1.710

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 475 parts In-Stock

1+ parts

$0.434

100+ parts

-

1k+ parts

-

10k+ parts

-

475

$0.434

-

-

-

Rochester

USA . 1,750 parts In-Stock

1+ parts

$0.550

100+ parts

$0.540

1k+ parts

$0.530

10k+ parts

-

1,750

$0.550

$0.540

$0.530

-

Newark

USA . 10 parts In-Stock

1+ parts

$1.710

100+ parts

$1.200

1k+ parts

$0.975

10k+ parts

$0.811

10

$1.710

$1.200

$0.975

$0.811

Farnell

UK . 138 parts In-Stock

1+ parts

$1.820

100+ parts

$0.869

1k+ parts

$0.834

10k+ parts

$0.816

138

$1.820

$0.869

$0.834

$0.816

DigiKey

USA . 588 parts In-Stock

1+ parts

$2.120

100+ parts

$0.919

1k+ parts

$0.672

10k+ parts

$0.570

588

$2.120

$0.919

$0.672

$0.570

Mouser Electronics

USA . 146 parts In-Stock

1+ parts

$2.120

100+ parts

$0.919

1k+ parts

$0.732

10k+ parts

$0.651

146

$2.120

$0.919

$0.732

$0.651

Element14

Singapore . 138 parts In-Stock

1+ parts

$3.070

100+ parts

$1.470

1k+ parts

$1.410

10k+ parts

$1.380

138

$3.070

$1.470

$1.410

$1.380

Chip1Stop

Japan . 150 parts In-Stock

1+ parts

-

100+ parts

$0.987

1k+ parts

-

10k+ parts

-

150

-

$0.987

-

-

Verical

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.687

1k+ parts

-

10k+ parts

-

100

-

$0.687

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,133 parts In-Stock

1+ parts

$0.428

100+ parts

-

1k+ parts

-

10k+ parts

-

1,133

$0.428

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.729

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.729

-

-

-

TME

Poland . 184 parts In-Stock

1+ parts

$0.760

100+ parts

$0.430

1k+ parts

$0.410

10k+ parts

-

184

$0.760

$0.430

$0.410

-

Vyrian

USA . 8,466 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

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8,466

-

-

-

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Flip Electronics

USA . 1,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,100

-

-

-

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IBS Electronics

USA . 550 parts In-Stock

1+ parts

-

100+ parts

$1.276

1k+ parts

$0.856

10k+ parts

-

550

-

$1.276

$0.856

-

NAC Semi

USA . 350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.160

10k+ parts

-

350

-

-

$1.160

-

Bristol Electronics

USA . 274 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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274

-

-

-

-

Inventory MP

USA . 244 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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244

-

-

-

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Cyclops Electronics Ltd

UK . 198 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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198

-

-

-

-

Atlantic Semiconductor

USA . 30 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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30

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 242 parts In-Stock

1+ parts

$0.392

100+ parts

-

1k+ parts

-

10k+ parts

-

242

$0.392

-

-

-

Semicontronic

India . 100 parts In-Stock

1+ parts

$0.396

100+ parts

$0.386

1k+ parts

$0.384

10k+ parts

-

100

$0.396

$0.386

$0.384

-

Corphita

USA . 163 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

-

10k+ parts

-

163

$0.406

-

-

-

Corohmni

South Africa . 110 parts In-Stock

1+ parts

$0.698

100+ parts

-

1k+ parts

-

10k+ parts

-

110

$0.698

-

-

-

Argo Parts USA

USA . 2,850 parts In-Stock

1+ parts

$0.719

100+ parts

-

1k+ parts

-

10k+ parts

$0.697

2,850

$0.719

-

-

$0.697

Bastille Electronics

Australia . 500 parts In-Stock

1+ parts

$0.729

100+ parts

$0.693

1k+ parts

$0.658

10k+ parts

$0.649

500

$0.729

$0.693

$0.658

$0.649

Continental Prestige Electronics

USA . 587 parts In-Stock

1+ parts

$0.828

100+ parts

$0.633

1k+ parts

$0.469

10k+ parts

-

587

$0.828

$0.633

$0.469

-

Authorized Procurement Solutions

USA . 50,000 parts In-Stock

1+ parts

-

100+ parts

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50,000

-

-

-

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Problanco Electronics

Mexico . 7,793 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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7,793

-

-

-

-

Kulean Microsystems

USA . 4,251 parts In-Stock

1+ parts

-

100+ parts

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4,251

-

-

-

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SupplyDigital Components

Austria . 3,710 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,710

-

-

-

-

TANS Electronics

Latvia . 3,576 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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3,576

-

-

-

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Eastek

USA . 2,850 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,850

-

-

-

-

Lixinc

USA . 2,658 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,658

-

-

-

-

GreenTree Electronics

Israel . 2,050 parts In-Stock

1+ parts

-

100+ parts

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2,050

-

-

-

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Perfect Parts

USA . 1,748 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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1,748

-

-

-

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UHIMA Technologies

Türkiye . 400 parts In-Stock

1+ parts

-

100+ parts

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400

-

-

-

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Kepictronics

USA . 198 parts In-Stock

1+ parts

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198

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Assy Fe

Spain . 45 parts In-Stock

1+ parts

-

100+ parts

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-

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45

-

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-

-

Overview

Unlock the power of efficient switching with the MJE18004G by Onsemi. Crafted with precision and expertise, this NPN Power BJT transistor offers unparalleled quality and reliability for a variety of applications. From industrial machinery to consumer electronics, this single configuration transistor delivers a seamless performance that exceeds expectations. Experience the value of reliability and efficiency with the MJE18004G, where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in electronic applications.

Configuration: SINGLE

Simplified circuit design and easy implementation in various electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off operations.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement on PCBs for streamlined assembly processes.

Terminal Form: THROUGH-HOLE

Allows for secure and stable connections on PCBs, ensuring a reliable electrical connection.

Maximum Power Dissipation (Abs): 75 W

Capable of handling high power dissipation, making it suitable for demanding applications that require power transistors.

Package Style (Meter): FLANGE MOUNT

Enables easy and secure mounting on heat sinks for efficient heat dissipation, improving overall performance.

Minimum DC Current Gain (hFE): 6

Provides consistent and predictable amplification of current in a circuit, ensuring stable operation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications that require extended operational capabilities.

Maximum Collector-Emitter Voltage: 450 V

Handles high voltage levels, allowing for use in applications that require voltage switching or regulation.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and performance, making them a reliable choice for various electronic designs.

Maximum Collector Current (IC): 5 A

Capable of handling high current levels, suitable for applications that require power switching or control.

Terminal Finish: TIN

Tin finish provides corrosion resistance and reliable electrical connections, ensuring long-term performance.

Terminal Position: SINGLE

Simplified design for easy installation and circuit integration.

Case Connection: COLLECTOR

Specific case connection for efficient heat dissipation, ensuring reliable operation at high power levels.

Nominal Transition Frequency (fT): 13 MHz

High transition frequency for fast switching operations, ideal for applications that require speed and efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE18004G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE18004G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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