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MJE3439G

Onsemi

MJE3439G by Onsemi

MJE3439G by Onsemi is a NPN power BJT with 15W Pd, 350V VCEO, and 0.3A IC. Ideal for high-power applications in industrial electronics due to its single configuration and flange mount package style. With a max operating temperature of 150°C, it offers reliable performance in various environments.

Median Price

$0.650

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8,427 parts In-Stock

1+ parts

$0.310

100+ parts

$0.300

1k+ parts

$0.300

10k+ parts

-

8,427

$0.310

$0.300

$0.300

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DigiKey

USA . 1,042 parts In-Stock

1+ parts

$0.650

100+ parts

$0.413

1k+ parts

$0.251

10k+ parts

-

1,042

$0.650

$0.413

$0.251

-

Element14

Singapore . 906 parts In-Stock

1+ parts

$0.818

100+ parts

$0.546

1k+ parts

$0.345

10k+ parts

$0.316

906

$0.818

$0.546

$0.345

$0.316

Avnet

USA . 2,000 parts In-Stock

1+ parts

-

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2,000

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Distributors (In-Stock)

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Digiode

USA . 1,330 parts In-Stock

1+ parts

$0.274

100+ parts

-

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1,330

$0.274

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Flip Electronics

USA . 500 parts In-Stock

1+ parts

-

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500

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Vyrian

USA . 285 parts In-Stock

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285

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Distributors (Availability)

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Continental Prestige Electronics

USA . 1,819 parts In-Stock

1+ parts

$0.239

100+ parts

$0.230

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-

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1,819

$0.239

$0.230

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Corphita

USA . 252 parts In-Stock

1+ parts

$0.259

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252

$0.259

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Corohmni

South Africa . 374 parts In-Stock

1+ parts

$0.288

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374

$0.288

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AZTECH Wire

Italy . 285 parts In-Stock

1+ parts

$18.820

100+ parts

-

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285

$18.820

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Kepictronics

USA . 28,490 parts In-Stock

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28,490

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QUARKTWIN TECHNOLOGY LTD

USA . 22,763 parts In-Stock

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22,763

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Problanco Electronics

Mexico . 6,646 parts In-Stock

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6,646

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Perfect Parts

USA . 4,589 parts In-Stock

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4,589

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Kulean Microsystems

USA . 2,986 parts In-Stock

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2,986

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Infinite Electronics LLP (Excess)

. 2,508 parts In-Stock

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2,508

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TANS Electronics

Latvia . 1,711 parts In-Stock

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1,711

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SupplyDigital Components

Austria . 1,388 parts In-Stock

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1,388

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Authorized Procurement Solutions

USA . 300 parts In-Stock

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300

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GreenTree Electronics

Israel . 213 parts In-Stock

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213

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UHIMA Technologies

Türkiye . 200 parts In-Stock

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200

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Overview

Discover the power and reliability of the MJE3439G by Onsemi, a top-of-the-line Power Bipolar Junction Transistor that offers unmatched performance in various applications. Manufactured by industry leader Onsemi, this NPN transistor is designed with a single configuration for ease of use. With a maximum collector-emitter voltage of 350V and a maximum power dissipation of 15W, this transistor ensures optimal efficiency and durability. Whether you're working on amplifiers, power supplies, or motor controls, the MJE3439G delivers exceptional value and performance that will exceed your expectations. Experience the quality and benefits of this product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used and versatile for a wide range of circuit applications.

Configuration: SINGLE

Simplified design for straightforward integration into circuits.

Maximum Power Dissipation (Abs): 15 W

Capable of handling high power dissipation, suitable for various applications.

Maximum Collector-Emitter Voltage: 350 V

Allows for high voltage operation, expanding the range of potential applications.

Minimum DC Current Gain (hFE): 15

Ensures consistent and reliable amplification of current.

Maximum Operating Temperature: 150 °C

Can operate in elevated temperatures without performance degradation.

Nominal Transition Frequency (fT): 15 MHz

Capable of switching at high frequencies for efficient circuit performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE3439G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE3439G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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