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MJE18002G

Onsemi

MJE18002G by Onsemi

MJE18002G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 450V, max. collector current of 2A, and min. DC current gain of 6. It is used for switching applications due to its high power dissipation of 50W and operating temperature up to 150 °C in a flange mount package style.

Median Price

$0.700

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 65,841 parts In-Stock

1+ parts

-

100+ parts

$0.687

1k+ parts

$0.570

10k+ parts

$0.508

65,841

-

$0.687

$0.570

$0.508

Verical

USA . 42,976 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.713

10k+ parts

$0.635

42,976

-

-

$0.713

$0.635

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 246 parts In-Stock

1+ parts

$0.535

100+ parts

-

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-

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246

$0.535

-

-

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Vyrian

USA . 1,935 parts In-Stock

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1,935

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Distributors (Availability)

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Corphita

USA . 715 parts In-Stock

1+ parts

$0.507

100+ parts

-

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-

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715

$0.507

-

-

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Corohmni

South Africa . 72 parts In-Stock

1+ parts

$0.563

100+ parts

-

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72

$0.563

-

-

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AZTECH Wire

Italy . 138 parts In-Stock

1+ parts

$13.360

100+ parts

-

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138

$13.360

-

-

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Continental Prestige Electronics

USA . 65,841 parts In-Stock

1+ parts

-

100+ parts

$0.509

1k+ parts

-

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65,841

-

$0.509

-

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 29,163 parts In-Stock

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29,163

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Problanco Electronics

Mexico . 8,160 parts In-Stock

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Microchip USA

USA . 7,402 parts In-Stock

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7,402

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SupplyDigital Components

Austria . 6,296 parts In-Stock

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6,296

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TANS Electronics

Latvia . 6,007 parts In-Stock

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6,007

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Kulean Microsystems

USA . 4,761 parts In-Stock

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4,761

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UHIMA Technologies

Türkiye . 239 parts In-Stock

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239

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Overview

Elevate your power management solutions with the MJE18002G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability for all your power bipolar junction transistor needs. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 450V and a maximum collector current of 2A. With a minimum DC current gain of 6 and a nominal transition frequency of 13 MHz, this transistor provides outstanding performance and efficiency. Trust Onsemi to deliver high-quality components that meet your power management requirements seamlessly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

Commonly used in power switching applications, offering high efficiency and performance.

Configuration: SINGLE

Simplified design and easy to use in various circuit configurations.

Transistor Application: SWITCHING

Suitable for applications requiring fast switching speeds and high power dissipation.

Package Shape: RECTANGULAR

Space-saving design for efficient PCB layout and integration.

Terminal Form: THROUGH-HOLE

Allows for easy manual soldering and secure mounting on the PCB.

Maximum Power Dissipation (Abs): 50 W

Capable of handling high power levels without overheating, ensuring reliable operation under heavy loads.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure attachment to external components for improved mechanical stability.

Minimum DC Current Gain (hFE): 6

Provides consistent and reliable amplification of the input signal for better performance in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 450 V

Capable of handling high voltage levels, ensuring reliable operation in high-power circuits.

Transistor Element Material: SILICON

Offers high efficiency, low leakage current, and stable performance characteristics.

Maximum Collector Current (IC): 2 A

Capable of handling moderate current levels, suitable for medium to high power applications.

Terminal Finish: TIN

Provides good solderability and conductivity for reliable electrical connections.

Terminal Position: SINGLE

Simplified connection interface for easy integration into circuits.

Case Connection: COLLECTOR

Allows for efficient heat dissipation and easy connection to external components.

Peak Reflow Temperature °C: 260

Capable of withstanding high-temperature soldering processes for reliable assembly.

Nominal Transition Frequency (fT): 13 MHz

Suitable for high-frequency applications requiring fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE18002G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE18002G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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