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MJE5851G

Onsemi

MJE5851G by Onsemi

MJE5851G by Onsemi is a PNP BJT with 80W power dissipation, 350V max. collector-emitter voltage, and 8A max. collector current. Ideal for switching applications, it features a single configuration with built-in diode and resistor in a rectangular package suitable for flange mount installations.

Median Price

$1.846

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 48 parts In-Stock

1+ parts

$1.846

100+ parts

$1.680

1k+ parts

$1.514

10k+ parts

-

48

$1.846

$1.680

$1.514

-

Rochester

USA . 8,500 parts In-Stock

1+ parts

-

100+ parts

$1.840

1k+ parts

$1.650

10k+ parts

$1.550

8,500

-

$1.840

$1.650

$1.550

Verical

USA . 8,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.063

10k+ parts

-

8,400

-

-

$2.063

-

Flip Electronics (Authorized)

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

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50

-

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Distributors (In-Stock)

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Digiode

USA . 895 parts In-Stock

1+ parts

$1.754

100+ parts

-

1k+ parts

-

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895

$1.754

-

-

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Vyrian

USA . 6,669 parts In-Stock

1+ parts

-

100+ parts

-

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6,669

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Flip Electronics

USA . 50 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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50

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,129 parts In-Stock

1+ parts

$1.570

100+ parts

-

1k+ parts

-

10k+ parts

-

5,129

$1.570

-

-

-

Corphita

USA . 617 parts In-Stock

1+ parts

$1.661

100+ parts

-

1k+ parts

-

10k+ parts

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617

$1.661

-

-

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Corohmni

South Africa . 283 parts In-Stock

1+ parts

$1.846

100+ parts

-

1k+ parts

-

10k+ parts

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283

$1.846

-

-

-

Advanced Electronics

New Zealand . 48 parts In-Stock

1+ parts

$1.846

100+ parts

$1.680

1k+ parts

$1.514

10k+ parts

-

48

$1.846

$1.680

$1.514

-

AZTECH Wire

Italy . 707 parts In-Stock

1+ parts

$21.320

100+ parts

-

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707

$21.320

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QUARKTWIN TECHNOLOGY LTD

USA . 10,273 parts In-Stock

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10,273

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TANS Electronics

Latvia . 5,323 parts In-Stock

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5,323

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Kulean Microsystems

USA . 1,850 parts In-Stock

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1,850

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Problanco Electronics

Mexico . 1,038 parts In-Stock

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1,038

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-

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SupplyDigital Components

Austria . 1,030 parts In-Stock

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1,030

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UHIMA Technologies

Türkiye . 641 parts In-Stock

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641

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Overview

Unlock the power of the MJE5851G by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader Onsemi, this PNP transistor offers unmatched reliability and performance. With a maximum power dissipation of 80W and a maximum collector-emitter voltage of 350V, this transistor is a versatile solution for a wide range of electronic projects. Its single configuration with built-in diode and resistor makes installation a breeze, while its high DC current gain ensures efficient operation. Trust the MJE5851G to deliver superior performance and value for all your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes this transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

PNP transistors are commonly used in power circuits, making this transistor suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify the circuit design and save space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing reliable performance in such scenarios.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and placement on the PCB.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection on the PCB.

Maximum Power Dissipation (Abs): 80 W

With a high power dissipation capacity, this transistor can handle high power loads efficiently.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for easy installation and heatsink attachment.

Minimum DC Current Gain (hFE): 5

A minimum DC current gain of 5 ensures proper amplification and performance in the circuit.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this transistor suitable for a variety of environments.

Maximum Collector-Emitter Voltage: 350 V

With a high maximum voltage rating, this transistor can safely handle high voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in various circuit applications.

Maximum Collector Current (IC): 8 A

The high collector current rating allows for the handling of large current loads.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good conductivity and solderability for secure connections.

Terminal Position: SINGLE

A single terminal position simplifies the circuit layout and connection process.

Case Connection: COLLECTOR

The collector case connection ensures efficient heat dissipation and improved performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5851G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5851G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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