Loading...

MJE5740AU

Onsemi

MJE5740AU by Onsemi

MJE5740AU by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a min hFE of 200, max VCE of 300V, and max IC of 8A. With a max operating temperature of 150 °C, this transistor is suitable for various high-power electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,317

-

-

-

-

Vyrian

USA . 1,717 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,717

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 5,634 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,634

-

-

-

-

Kulean Microsystems

USA . 5,516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,516

-

-

-

-

TANS Electronics

Latvia . 2,634 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,634

-

-

-

-

Corphita

USA . 1,085 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,085

-

-

-

-

UHIMA Technologies

Türkiye . 981 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

981

-

-

-

-

Corohmni

South Africa . 352 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

352

-

-

-

-

Problanco Electronics

Mexico . 101 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

101

-

-

-

-

Overview

Enhance your power management solutions with the MJE5740AU by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor offers unrivaled performance in switching applications. With a maximum collector-emitter voltage of 300V and a collector current of 8A, this NPN transistor provides reliability and efficiency like no other. The DARLINGTON configuration, along with a built-in diode and resistor, ensures seamless operation, while the high DC current gain of 200 guarantees optimal functionality. Trust Onsemi for quality components that deliver value and performance in every use case.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for ease of handling and mounting.

Polarity or Channel Type: NPN

Commonly used configuration for general purpose applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Integrated components for simplified circuit design and reduced component count.

Transistor Application: SWITCHING

Suitable for switching applications with fast response times.

Package Shape: RECTANGULAR

Standard shape for easy mounting and compatibility with various circuit layouts.

Terminal Form: THROUGH-HOLE

Traditional form factor for easy through-hole PCB assembly.

No. of Terminals: 3

Simple 3-terminal design for straightforward connection in circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount for secure and stable mounting on PCBs or heatsinks.

Minimum DC Current Gain (hFE): 200

High current gain for amplification and signal processing applications.

Maximum Operating Temperature: 150 °C

Wide temperature range for reliable operation in various environments.

Maximum Collector-Emitter Voltage: 300 V

High voltage rating for handling higher voltage applications.

Transistor Element Material: SILICON

Silicon material for efficient performance and durability.

Maximum Collector Current (IC): 8 A

High current rating for handling moderate to high current loads.

Terminal Finish: TIN LEAD

Tin lead finish for reliable electrical connections and soldering.

Terminal Position: SINGLE

Single terminal position for simplified connectivity in circuits.

Case Connection: COLLECTOR

Collector connection for easy integration into circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5740AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

300 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5740AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20