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MJE5740BG

Onsemi

MJE5740BG by Onsemi

MJE5740BG by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. It has a hFE of 200, max temp of 150 °C, and Vce of 300V. This transistor features a built-in diode and resistor in a rectangular package suitable for flange mount installations.

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,446 parts In-Stock

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Digiode

USA . 897 parts In-Stock

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TANS Electronics

Latvia . 7,350 parts In-Stock

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Problanco Electronics

Mexico . 5,964 parts In-Stock

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Kulean Microsystems

USA . 5,461 parts In-Stock

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SupplyDigital Components

Austria . 5,137 parts In-Stock

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Corphita

USA . 2,016 parts In-Stock

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UHIMA Technologies

Türkiye . 913 parts In-Stock

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Corohmni

South Africa . 371 parts In-Stock

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Overview

Enhance your power management solutions with the MJE5740BG by Onsemi, a high-quality Power Bipolar Junction Transistor that features a Darlington configuration with a built-in diode and resistor. Manufactured by Onsemi, known for their cutting-edge technology and reliability, this transistor is ideal for switching applications. With a maximum collector-emitter voltage of 300V and a maximum collector current of 8A, the MJE5740BG offers exceptional performance and durability. Upgrade your projects with this versatile component and experience enhanced efficiency and functionality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and resistant to external environmental factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and reliable performance.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and allows for high switching speeds. The built-in diode and resistor simplify circuit design and reduce the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient performance in controlling electrical circuits.

Package Shape: RECTANGULAR

The rectangular package shape provides easy mounting and integration into circuit boards, saving space and facilitating efficient layout design.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and reliable connections, making it easier to solder the transistor onto a circuit board for stable operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures and maintain performance under demanding conditions.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating of 300V allows for safe operation in high voltage circuits without risk of breakdown or damage.

Maximum Collector Current (IC): 8 A

With a maximum collector current rating of 8A, this transistor can handle high current loads, making it suitable for power control and switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5740BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

300 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5740BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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