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MJE5852G

Onsemi

MJE5852G by Onsemi

The Onsemi MJE5852G is a PNP BJT transistor with 400V VCEO, 8A IC, and 80W power dissipation. Ideal for switching applications, it features a built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, it suits high-power requirements in various electronic circuits.

Median Price

$3.730

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 290 parts In-Stock

1+ parts

$1.570

100+ parts

$0.719

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290

$1.570

$0.719

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Adafruit Industries

USA . 650 parts In-Stock

1+ parts

$1.833

100+ parts

$1.668

1k+ parts

$1.503

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650

$1.833

$1.668

$1.503

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Farnell

UK . 247 parts In-Stock

1+ parts

$3.730

100+ parts

$1.750

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$1.470

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247

$3.730

$1.750

$1.470

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Chip1Stop

Japan . 288 parts In-Stock

1+ parts

$4.030

100+ parts

$1.760

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$1.540

288

$4.030

$1.760

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$1.540

Mouser Electronics

USA . 711 parts In-Stock

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$4.400

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$4.400

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DigiKey

USA . 426 parts In-Stock

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$4.400

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$2.051

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$1.572

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$1.540

426

$4.400

$2.051

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$1.540

Newark

USA . 202 parts In-Stock

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$5.040

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$2.690

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$2.330

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202

$5.040

$2.690

$2.330

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Element14

Singapore . 202 parts In-Stock

1+ parts

$6.370

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$2.570

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$2.470

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202

$6.370

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$2.470

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Rochester

USA . 10,105 parts In-Stock

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$1.530

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$1.370

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$1.290

10,105

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$1.530

$1.370

$1.290

Verical

USA . 10,036 parts In-Stock

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$1.712

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$1.613

10,036

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$1.613

Flip Electronics (Authorized)

USA . 278 parts In-Stock

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Master Electronics

USA . 150 parts In-Stock

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$1.430

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$1.350

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$1.330

150

-

$1.430

$1.350

$1.330

Distributors (In-Stock)

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Digiode

USA . 656 parts In-Stock

1+ parts

$1.425

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656

$1.425

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Nova Conductors

Japan . 50 parts In-Stock

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$1.828

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50

$1.828

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IBS Electronics

USA . 300 parts In-Stock

1+ parts

$2.034

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$2.300

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$2.272

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300

$2.034

$2.300

$2.272

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TME

Poland . 72 parts In-Stock

1+ parts

$4.110

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$3.200

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72

$4.110

$3.200

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Vyrian

USA . 3,796 parts In-Stock

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NAC Semi

USA . 700 parts In-Stock

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$2.580

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$2.380

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700

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$2.580

$2.380

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J2 Sourcing AB

Sweden . 615 parts In-Stock

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615

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Flip Electronics

USA . 300 parts In-Stock

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300

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LWI Electronics Inc

India . 10 parts In-Stock

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10

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Sunrise Surplus Inc.

USA . 10 parts In-Stock

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10

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Sensible Micro Corp

USA . 8 parts In-Stock

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8

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ComSIT Distribution GmbH

Germany . 8 parts In-Stock

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8

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ComSIT USA

USA . 8 parts In-Stock

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Prism Electronics

USA . 5 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,964 parts In-Stock

1+ parts

$1.240

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1,964

$1.240

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Aztec Data Supply Inc.

USA . 594 parts In-Stock

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$1.331

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594

$1.331

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Corphita

USA . 2,146 parts In-Stock

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$1.350

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2,146

$1.350

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Corohmni

South Africa . 231 parts In-Stock

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$1.390

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231

$1.390

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Argo Parts USA

USA . 891 parts In-Stock

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$1.828

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891

$1.828

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Advanced Electronics

New Zealand . 650 parts In-Stock

1+ parts

$1.833

100+ parts

$1.668

1k+ parts

$1.503

10k+ parts

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650

$1.833

$1.668

$1.503

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Continental Prestige Electronics

USA . 1,240 parts In-Stock

1+ parts

$3.430

100+ parts

$1.930

1k+ parts

$1.580

10k+ parts

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1,240

$3.430

$1.930

$1.580

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Perfect Parts

USA . 28,084 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,788 parts In-Stock

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20,788

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Epart123

USA . 18,295 parts In-Stock

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$2.500

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$2.500

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$2.500

Microchip USA

USA . 5,678 parts In-Stock

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5,678

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Kulean Microsystems

USA . 5,436 parts In-Stock

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Problanco Electronics

Mexico . 4,193 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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TANS Electronics

Latvia . 1,714 parts In-Stock

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1,714

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SupplyDigital Components

Austria . 1,033 parts In-Stock

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1,033

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UHIMA Technologies

Türkiye . 721 parts In-Stock

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721

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Authorized Procurement Solutions

USA . 150 parts In-Stock

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Assy Fe

Spain . 150 parts In-Stock

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Netroflash

USA . 50 parts In-Stock

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$1.792

1k+ parts

$1.737

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$1.700

50

-

$1.792

$1.737

$1.700

Eastek

USA . 50 parts In-Stock

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50

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Overview

Experience the superior quality and reliability of the MJE5852G Power Bipolar Junction Transistor by Onsemi. This PNP transistor is designed for switching applications, offering a maximum collector-emitter voltage of 400V and a maximum collector current of 8A. With a built-in diode and resistor, this transistor provides convenience and efficiency in your electronic projects. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and unlock the power of the MJE5852G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes this transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits and provides efficient performance for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and save space, making this transistor a convenient choice for applications requiring these components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and reliability in controlling electrical signals.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and ensures secure placement, enhancing the overall stability of the transistor in various setups.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides easy soldering and ensures strong connections, making installation hassle-free.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit design and compatibility with different systems.

Maximum Power Dissipation (Abs): 80 W

The high maximum power dissipation of 80W ensures reliable performance under heavy load conditions, making it suitable for power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers secure mounting and efficient heat dissipation, ensuring optimal performance in various environments.

Minimum DC Current Gain (hFE): 5

The minimum DC current gain of 5 ensures consistent and stable amplification in circuits, making this transistor a reliable choice for signal processing.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage of 400V allows for versatile use in different voltage systems, ensuring compatibility in a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high conductivity and efficiency, ensuring excellent performance and durability.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8A, this transistor can reliably handle high currents, making it ideal for power control applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent conductivity and corrosion resistance, ensuring long-lasting performance in various operating conditions.

Terminal Position: SINGLE

The single terminal position simplifies installation and connection, allowing for easy integration into circuits and systems.

Case Connection: COLLECTOR

The case connection at the collector terminal ensures efficient current flow and stable operation, making this transistor a reliable choice for electrical applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5852G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

5

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5852G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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