Loading...

MJE5740BD

Onsemi

MJE5740BD by Onsemi

MJE5740BD by Onsemi is a NPN power BJT with a Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 300V, max collector current of 8A, and min DC current gain of 200. This transistor comes in a rectangular package with through-hole terminals and can operate at up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 911 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

911

-

-

-

-

Vyrian

USA . 216 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

216

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 6,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,790

-

-

-

-

SupplyDigital Components

Austria . 3,620 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,620

-

-

-

-

TANS Electronics

Latvia . 3,340 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,340

-

-

-

-

Problanco Electronics

Mexico . 3,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,279

-

-

-

-

Corphita

USA . 1,199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,199

-

-

-

-

Corohmni

South Africa . 264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

264

-

-

-

-

UHIMA Technologies

Türkiye . 207 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

207

-

-

-

-

Overview

Looking for a reliable and efficient power bipolar junction transistor? Look no further than the MJE5740BD by Onsemi. With a reputation for high-quality products, Onsemi delivers exceptional performance and reliability in the field of power BJT transistors. The MJE5740BD is perfect for switching applications, offering a maximum collector-emitter voltage of 300 V and a maximum collector current of 8 A. Its NPN configuration with a Darlington design, built-in diode, and resistor make it a versatile choice for various electronic projects. Trust Onsemi to provide you with the best in power transistors, ensuring your applications run smoothly and efficiently.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and fast switching speeds.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and low saturation voltage, making it ideal for applications requiring high power amplification.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast and reliable switching transitions for various electronic circuits.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, ensuring stable performance even in demanding environments.

Maximum Collector-Emitter Voltage: 300 V

Suitable for applications requiring high voltage handling capabilities, providing flexibility in circuit design.

Maximum Collector Current (IC): 8 A

Capable of handling high collector currents, making it suitable for power applications with higher current requirements.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5740BD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

300 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5740BD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20