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MJE521

Onsemi

MJE521 by Onsemi

MJE521 by Onsemi is a NPN BJT transistor with 40V VCEO, 4A IC, and 40W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package suitable for flange mount. Operating up to 135 °C, it features hFE of at least 40 and tin-lead terminal finish.

Median Price

$1.332

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 50 parts In-Stock

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$1.332

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$1.212

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$1.092

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$1.332

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$1.092

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Distributors (In-Stock)

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DF Sales Co.

USA . 193 parts In-Stock

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$0.720

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DF Sales Co.

USA . 193 parts In-Stock

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Component Electronics Inc.

Canada . 180 parts In-Stock

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$0.770

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$0.580

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$0.500

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$0.770

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Digiode

USA . 2,173 parts In-Stock

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$1.265

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Ace Electronics

USA . 1 parts In-Stock

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American Microsemiconductor Inc.

USA . 41 parts In-Stock

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Anansix

USA . 3,259 parts In-Stock

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Zilex Electronics Inc.

Canada . 2,990 parts In-Stock

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2,990

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Vyrian

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ECAB

Sweden . 182 parts In-Stock

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J2 Sourcing AB

Sweden . 174 parts In-Stock

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Electronic Expediters

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Sunrise Surplus Inc.

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EMSNET

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ACDS - Activité Composants Distribution Service

France . 60 parts In-Stock

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R&J Components

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Fibra_Brandt Electronic GMBH

Germany . 38 parts In-Stock

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Lakeview Electronics

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Inland Empire Components Inc.

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Electronics Depot

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LittleDiode

UK . 6 parts In-Stock

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MISTER SPROCKETS

USA . 6 parts In-Stock

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Prism Electronics

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Elcom Components

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EPE Components Inc.

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Bristol Electronics

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ComSIT Distribution GmbH

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,011 parts In-Stock

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$0.385

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$0.346

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Corohmni

South Africa . 272 parts In-Stock

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$0.720

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MKK Technologies

India . 1,396 parts In-Stock

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$0.723

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DigiPath Technology Company

USA . 1,396 parts In-Stock

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Corphita

USA . 5,632 parts In-Stock

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$1.199

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.332

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$1.212

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$1.092

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$1.332

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Component Stockers USA

USA . 307 parts In-Stock

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$99.990

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Problanco Electronics

Mexico . 8,001 parts In-Stock

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Kepictronics

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SupplyDigital Components

Austria . 5,039 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 349 parts In-Stock

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UHIMA Technologies

Türkiye . 337 parts In-Stock

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Parana Technologies

USA . 269 parts In-Stock

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$0.460

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Perfect Parts

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Assy Fe

Spain . 1 parts In-Stock

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Overview

Upgrade your power systems with the reliable MJE521 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like the MJE521, perfect for switching applications. With a maximum collector current of 4 A and a minimum DC current gain of 40, this NPN transistor offers superior performance and efficiency. Trust in Onsemi's reputation for excellence and experience seamless operation with the MJE521. Elevate your projects with this high-value component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic devices and circuits, offering reliable performance.

Configuration: SINGLE

Simplifies the circuit design by using a single transistor for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation.

Maximum Power Dissipation (Abs): 40 W

Can handle high power dissipation, suitable for applications requiring power switching.

Package Shape: RECTANGULAR

Allows for easy mounting and placement in circuit boards or systems.

Terminal Form: THROUGH-HOLE

Provides secure and stable connections for better performance and reliability.

No. of Terminals: 3

Simple 3-terminal configuration for easy integration into circuits.

Maximum Operating Temperature: 135 °C

Can operate at high temperatures without compromising performance, suitable for various environments.

Maximum Collector-Emitter Voltage: 40 V

Can handle high voltages, making it versatile for different applications.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, suitable for power switching tasks.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE521 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE521 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-828-0720, 5961008280720

NIIN

008280720

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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