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MJE5731G

Onsemi

MJE5731G by Onsemi

The Onsemi MJE5731G is a PNP BJT transistor with max. collector-emitter voltage of 350V and max. power dissipation of 40W. Ideal for switching applications, it has a min. DC current gain of 10 and operates at up to 150°C. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$1.756

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 481 parts In-Stock

1+ parts

$1.520

100+ parts

$0.650

1k+ parts

$0.439

10k+ parts

$0.430

481

$1.520

$0.650

$0.439

$0.430

Arrow

USA . 36 parts In-Stock

1+ parts

$1.723

100+ parts

$0.757

1k+ parts

$0.451

10k+ parts

-

36

$1.723

$0.757

$0.451

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Mouser Electronics

USA . 513 parts In-Stock

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$1.790

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513

$1.790

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DigiKey

USA . 13 parts In-Stock

1+ parts

$1.790

100+ parts

$0.765

1k+ parts

$0.553

10k+ parts

$0.452

13

$1.790

$0.765

$0.553

$0.452

Newark

USA . 315 parts In-Stock

1+ parts

$1.980

100+ parts

$0.954

1k+ parts

$0.742

10k+ parts

$0.640

315

$1.980

$0.954

$0.742

$0.640

Element14

Singapore . 481 parts In-Stock

1+ parts

$2.590

100+ parts

$1.120

1k+ parts

$0.748

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$0.734

481

$2.590

$1.120

$0.748

$0.734

Verical

USA . 1,400 parts In-Stock

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-

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$1.894

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$0.783

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1,400

-

$1.894

$0.783

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Master Electronics

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

$1.605

1k+ parts

$0.666

10k+ parts

$0.567

1,400

-

$1.605

$0.666

$0.567

Chip1Stop

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

$0.801

1k+ parts

$0.577

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500

-

$0.801

$0.577

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Rochester

USA . 15 parts In-Stock

1+ parts

-

100+ parts

$0.614

1k+ parts

$0.509

10k+ parts

$0.454

15

-

$0.614

$0.509

$0.454

Flip Electronics (Authorized)

USA . 14 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 429 parts In-Stock

1+ parts

$0.477

100+ parts

-

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429

$0.477

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Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$0.744

100+ parts

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550

$0.744

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NAC Semi

USA . 8,400 parts In-Stock

1+ parts

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$1.180

10k+ parts

$1.060

8,400

-

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$1.180

$1.060

IBS Electronics

USA . 1,550 parts In-Stock

1+ parts

-

100+ parts

$0.919

1k+ parts

$0.659

10k+ parts

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1,550

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$0.919

$0.659

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Vyrian

USA . 442 parts In-Stock

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442

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ACDS - Activité Composants Distribution Service

France . 30 parts In-Stock

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30

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Holdelec - ElecDif-Pro

France . 30 parts In-Stock

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30

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Flip Electronics

USA . 14 parts In-Stock

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14

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Distributors (Availability)

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Ampacity Inc.

Singapore . 581 parts In-Stock

1+ parts

$0.427

100+ parts

-

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581

$0.427

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Semicontronic

India . 397 parts In-Stock

1+ parts

$0.427

100+ parts

$0.416

1k+ parts

$0.414

10k+ parts

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397

$0.427

$0.416

$0.414

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Corphita

USA . 142 parts In-Stock

1+ parts

$0.452

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142

$0.452

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Corohmni

South Africa . 303 parts In-Stock

1+ parts

$0.502

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303

$0.502

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Component Stockers USA

USA . 4,781 parts In-Stock

1+ parts

$0.540

100+ parts

$0.520

1k+ parts

$0.480

10k+ parts

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4,781

$0.540

$0.520

$0.480

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Argo Parts USA

USA . 66 parts In-Stock

1+ parts

$0.744

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66

$0.744

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Continental Prestige Electronics

USA . 711 parts In-Stock

1+ parts

$0.766

100+ parts

$0.597

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711

$0.766

$0.597

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Aztec Data Supply Inc.

USA . 580 parts In-Stock

1+ parts

$1.243

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580

$1.243

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 18,389 parts In-Stock

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Lixinc

USA . 17,835 parts In-Stock

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Problanco Electronics

Mexico . 8,049 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Kulean Microsystems

USA . 5,053 parts In-Stock

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5,053

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SupplyDigital Components

Austria . 4,401 parts In-Stock

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TANS Electronics

Latvia . 3,007 parts In-Stock

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Perfect Parts

USA . 2,004 parts In-Stock

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2,004

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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$0.730

1k+ parts

$0.707

10k+ parts

$0.692

2,000

-

$0.730

$0.707

$0.692

UHIMA Technologies

Türkiye . 625 parts In-Stock

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625

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Glotronic Ltd.

UK . 480 parts In-Stock

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480

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Kepictronics

USA . 400 parts In-Stock

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400

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Eastek

USA . 200 parts In-Stock

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200

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GreenTree Electronics

Israel . 200 parts In-Stock

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200

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Overview

Unleash the power of innovation with the MJE5731G by Onsemi. Crafted with precision and expertise, this Power BJT transistor is designed to excel in switching applications, providing unmatched performance and reliability. From its durable plastic/epoxy body to its high collector-emitter voltage of 350V, this transistor offers unparalleled value and benefits. Whether you're looking to enhance your electronics projects or optimize your industrial applications, the MJE5731G is your go-to solution for seamless operation and efficiency. Elevate your creations with Onsemi's cutting-edge technology and unlock endless possibilities today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, allowing for reliable performance in various operating conditions.

Polarity or Channel Type: PNP

Allows for operation in circuits where PNP transistors are required, providing versatility in circuit design.

Configuration: SINGLE

Simplified design and easy integration into circuits due to single configuration.

Transistor Application: SWITCHING

Suitable for switching applications, ensuring efficient operation in switching circuits.

Package Shape: RECTANGULAR

Compact and space-saving package shape enables efficient placement on circuit boards.

Terminal Form: THROUGH-HOLE

Ease of soldering and secure connection to circuit boards for stable performance.

Maximum Power Dissipation (Abs): 40 W

Handles high power dissipation, making it ideal for applications that require high power handling capability.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure attachment to heatsinks or other components for effective heat dissipation.

Minimum DC Current Gain (hFE): 10

Provides consistent amplification of current, ensuring reliable operation in various circuit configurations.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, offering reliability under challenging conditions.

Maximum Collector-Emitter Voltage: 350 V

Handles high voltages safely, allowing for use in circuits that require high voltage switching capability.

Transistor Element Material: SILICON

Silicon-based construction provides stability and reliability in transistor performance.

Maximum Collector Current (IC): 1 A

Capable of handling high collector currents, making it suitable for circuits that require high current switching.

Terminal Finish: TIN

Provides a reliable and durable terminal finish for secure connections and long-term performance.

Terminal Position: SINGLE

Simplified terminal configuration for easy integration into circuits and secure connections.

Case Connection: COLLECTOR

Collector connection for efficient current handling and performance in circuit applications.

Nominal Transition Frequency (fT): 10 MHz

Suitable for high-frequency applications, ensuring efficient switching and performance in signal processing circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5731G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE5731G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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