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MJE521G

Onsemi

MJE521G by Onsemi

MJE521G by Onsemi is a NPN BJT transistor with 40V VCEO, 4A IC, and 40W Ptot. Ideal for switching applications, it has a single configuration in a plastic/epoxy package suitable for flange mount. Operating up to 135 °C, it offers a min hFE of 40 and features silicon element material.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 292 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.235

292

-

$0.317

$0.263

$0.235

Distributors (In-Stock)

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Digiode

USA . 1,401 parts In-Stock

1+ parts

$0.247

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1,401

$0.247

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Vyrian

USA . 6,380 parts In-Stock

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6,380

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DigiKey Marketplace

USA . 1,146 parts In-Stock

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Semi Source

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Corphita

USA . 1,206 parts In-Stock

1+ parts

$0.234

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1,206

$0.234

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Corohmni

South Africa . 264 parts In-Stock

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$0.260

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264

$0.260

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Benley Electronics

USA . 29 parts In-Stock

1+ parts

$0.300

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29

$0.300

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AZTECH Wire

Italy . 262 parts In-Stock

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$16.860

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262

$16.860

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TANS Electronics

Latvia . 7,557 parts In-Stock

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Kulean Microsystems

USA . 7,538 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Continental Prestige Electronics

USA . 1,146 parts In-Stock

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$0.235

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1,146

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$0.235

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SupplyDigital Components

Austria . 1,121 parts In-Stock

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Problanco Electronics

Mexico . 910 parts In-Stock

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UHIMA Technologies

Türkiye . 550 parts In-Stock

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550

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Overview

Discover the power of the MJE521G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector current of 4A and a minimum DC current gain of 40, this NPN transistor offers reliable performance in a convenient through-hole package. Manufactured by Onsemi, known for their cutting-edge technology and durable products, the MJE521G provides customers with exceptional value and efficiency. Whether you're building a new electronic project or upgrading existing systems, trust the MJE521G to deliver superior performance and reliability every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications.

Polarity or Channel Type: NPN

Allows for current flow from emitter to collector, commonly used in amplification and switching circuits.

Configuration: SINGLE

Simplified design with one transistor per package, easy to integrate into circuits.

Transistor Application: SWITCHING

Optimized for high-speed switching applications, provides efficient performance.

Package Shape: RECTANGULAR

Space-saving design, suitable for densely packed electronic devices.

Maximum Power Dissipation (Abs): 40 W

Capable of handling high power dissipation, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Securely mountable with a flange, ideal for stable installation in electronic systems.

Maximum Collector-Emitter Voltage: 40 V

Can handle high voltage levels, suitable for various voltage requirements.

Maximum Collector Current (IC): 4 A

Capable of handling high currents, suitable for power circuits and motor control applications.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering process, ensuring reliable connections.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE521G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

135 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE521G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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