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MJE5740BC

Onsemi

MJE5740BC by Onsemi

MJE5740BC by Onsemi is a NPN power BJT with a min hFE of 200, max VCE of 300V, and max IC of 8A. Ideal for switching applications, this Darlington transistor features a built-in diode and resistor in a plastic/epoxy package with through-hole terminals. Operating up to 150 °C, it is commonly used in flange mount configurations.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,101 parts In-Stock

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Vyrian

USA . 840 parts In-Stock

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840

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Kulean Microsystems

USA . 4,441 parts In-Stock

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TANS Electronics

Latvia . 3,962 parts In-Stock

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Problanco Electronics

Mexico . 3,801 parts In-Stock

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Corphita

USA . 2,392 parts In-Stock

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SupplyDigital Components

Austria . 1,116 parts In-Stock

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UHIMA Technologies

Türkiye . 532 parts In-Stock

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Corohmni

South Africa . 256 parts In-Stock

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Overview

Upgrade your power switching applications with the MJE5740BC by Onsemi. Known for their high-quality products, Onsemi delivers reliable and efficient Power Bipolar Junction Transistors that are essential in various electronic devices. The MJE5740BC is a versatile NPN transistor with a built-in diode and resistor, ensuring seamless performance in demanding environments. With a maximum collector-emitter voltage of 300V and a collector current of 8A, this transistor provides exceptional value and benefits to customers looking for superior switching capabilities. Trust Onsemi to power up your designs with the MJE5740BC.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and built-in diode and resistor provide added functionality.

Transistor Application: SWITCHING

Designed for efficient switching applications with reliable performance.

Package Shape: RECTANGULAR

Compact and space-saving design for easy installation and integration.

Terminal Form: THROUGH-HOLE

Allows for secure and stable connection to a circuit board.

No. of Terminals: 3

Simplifies the wiring process and reduces complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Facilitates mounting and installation in various electronic devices or systems.

Minimum DC Current Gain (hFE): 200

Ensures sufficient current gain for reliable performance in different applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 300 V

Can handle high voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon material ensures stable and consistent performance over a wide temperature range.

Maximum Collector Current (IC): 8 A

Capable of handling high current loads for various power applications.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for easy assembly.

Terminal Position: SINGLE

Simplified connection layout for easier integration into circuits.

Case Connection: COLLECTOR

Allows for efficient heat dissipation and improved thermal management.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5740BC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

300 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5740BC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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