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MJE5731A

Onsemi

MJE5731A by Onsemi

MJE5731A by Onsemi is a PNP BJT transistor with 375V VCEO, 1A IC, and 40W Ptot. Ideal for switching applications, it has hFE of 10 and operates up to 140 °C. Package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

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8

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Vyrian

USA . 1,990 parts In-Stock

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Digiode

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Sunrise Surplus Inc.

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MISTER SPROCKETS

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ACDS - Activité Composants Distribution Service

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MRC Electronics

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Bristol Electronics

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Resion

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Component Stockers USA

USA . 358 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

Latvia . 3,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 1,043 parts In-Stock

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UHIMA Technologies

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Corphita

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Overview

Experience superior quality and performance with the MJE5731A by Onsemi. As a leading manufacturer in the industry, Onsemi delivers innovative power bipolar junction transistors that are ideal for switching applications. With its PNP configuration and high power dissipation, this transistor offers unmatched reliability and efficiency. Whether you're designing electronic circuits or industrial systems, the MJE5731A provides the value, benefits, and advantages that customers need to stay ahead in today's competitive market. Trust Onsemi to power your next project with cutting-edge technology and superior performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and thermal conductivity, making the product reliable and efficient.

Polarity or Channel Type: PNP

The PNP polarity allows for easy circuit design and compatibility with other PNP components in the system.

Configuration: SINGLE

The single configuration simplifies the circuit layout and reduces complexity during installation.

Transistor Application: SWITCHING

Designed for switching applications, providing fast response times and high efficiency in various electronic circuits.

Maximum Power Dissipation (Abs) 40 W

With a high maximum power dissipation, this product can handle heavy loads and operate reliably under high power conditions.

Maximum Collector-Emitter Voltage: 375 V

The high collector-emitter voltage rating allows for use in applications where higher voltages are present, increasing versatility.

Maximum Collector Current (IC): 1 A

Capable of handling up to 1 amp of current, making it suitable for a wide range of applications without the risk of overload.

Nominal Transition Frequency (fT): 10 MHz

The high transition frequency enables faster switching speeds and better performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5731A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

375 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

140 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE5731A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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