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MJE5740AK

Onsemi

MJE5740AK by Onsemi

MJE5740AK by Onsemi is a NPN Power BJT with a DC current gain of 200. It operates at up to 150 °C, handles 300V and 8A. Ideal for switching applications due to its Darlington configuration with built-in diode and resistor.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

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Digiode

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SupplyDigital Components

Austria . 6,824 parts In-Stock

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TANS Electronics

Latvia . 6,023 parts In-Stock

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Kulean Microsystems

USA . 2,840 parts In-Stock

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Corphita

USA . 2,267 parts In-Stock

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Problanco Electronics

Mexico . 1,519 parts In-Stock

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UHIMA Technologies

Türkiye . 563 parts In-Stock

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Corohmni

South Africa . 261 parts In-Stock

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Overview

Upgrade your power management with the MJE5740AK by Onsemi. Crafted with precision and reliability, Onsemi is a trusted manufacturer known for its commitment to quality. This Power Bipolar Junction Transistor (BJT) is designed for switching applications, offering a high DC current gain of 200 and a maximum collector current of 8A. With a maximum operating temperature of 150 °C, this NPN transistor is versatile and efficient for various electronic projects. Trust in Onsemi's expertise and experience to deliver top-notch performance and value with the MJE5740AK.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the transistor suitable for various operating conditions.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by combining multiple components into one package.

Transistor Application: SWITCHING

Designed for efficient switching applications, making it ideal for power control and regulation.

Package Shape: RECTANGULAR

Easily mountable and fits well in a variety of circuit designs.

Terminal Form: THROUGH-HOLE

Enables easy soldering onto circuit boards for secure connections.

Maximum Collector-Emitter Voltage: 300 V

Handles high voltage levels, ensuring reliable performance in demanding applications.

Maximum Collector Current (IC): 8 A

Capable of handling high current loads, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5740AK attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

300 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5740AK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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