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MJE5740BS

Onsemi

MJE5740BS by Onsemi

MJE5740BS by Onsemi is a NPN power BJT with a Darlington configuration, ideal for switching applications. It offers a min hFE of 200 and can handle up to 8A of collector current at 300V. This transistor operates at temperatures up to 150 °C, making it suitable for various power control circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,993 parts In-Stock

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Digiode

USA . 600 parts In-Stock

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600

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Kulean Microsystems

USA . 8,246 parts In-Stock

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SupplyDigital Components

Austria . 6,111 parts In-Stock

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TANS Electronics

Latvia . 4,999 parts In-Stock

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Corphita

USA . 2,269 parts In-Stock

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UHIMA Technologies

Türkiye . 786 parts In-Stock

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Problanco Electronics

Mexico . 416 parts In-Stock

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Corohmni

South Africa . 125 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the MJE5740BS Power Bipolar Junction Transistor. Designed for switching applications, this NPN transistor features a Darlington configuration with a built-in diode and resistor for seamless operation. With a maximum collector-emitter voltage of 300V and a maximum collector current of 8A, this transistor offers exceptional performance in a wide range of electronic systems. Trust Onsemi to deliver unmatched value and benefits with cutting-edge technology that meets your needs. Elevate your projects with the MJE5740BS and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, ensuring a longer lifespan in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications due to their high input impedance and fast switching speeds.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high amplification, while the built-in diode and resistor provide added protection and convenience in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering, making installation efficient and reliable.

No. of Terminals: 3

The simple 3-terminal design simplifies circuit connections and reduces complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

The flange mount style offers secure attachment and stability in high-vibration environments.

Minimum DC Current Gain (hFE): 200

A high minimum current gain ensures consistent and reliable performance in amplification and switching applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 300 V

The high maximum voltage rating allows for use in circuits with higher voltage requirements, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and reliability, making them ideal for various electronic applications.

Maximum Collector Current (IC): 8 A

With a high maximum collector current, this transistor can handle larger loads and provide reliable switching capabilities.

Terminal Finish: TIN LEAD

Tin lead finish provides good conductivity and solderability, ensuring secure connections and robust performance.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the risk of errors in circuit connections.

Case Connection: COLLECTOR

The collector case connection ensures efficient heat dissipation and helps maintain the transistor's performance under high load conditions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5740BS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

300 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJE5740BS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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