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MJE5730G

Onsemi

MJE5730G by Onsemi

MJE5730G by Onsemi is a PNP power BJT with max. collector-emitter voltage of 300V, max. collector current of 1A, and max. power dissipation of 40W. Ideal for switching applications due to its single configuration and silicon transistor element material in a rectangular package style with through-hole terminals.

Median Price

$1.070

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Chip1Stop

Japan . 302 parts In-Stock

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$0.731

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Arrow

USA . 84 parts In-Stock

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$0.861

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$0.861

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Farnell

UK . 819 parts In-Stock

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$1.280

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$0.632

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$0.402

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$0.394

819

$1.280

$0.632

$0.402

$0.394

Mouser Electronics

USA . 1,794 parts In-Stock

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$1.800

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$1.800

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DigiKey

USA . 191 parts In-Stock

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$1.950

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$0.837

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$0.608

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$0.505

191

$1.950

$0.837

$0.608

$0.505

Newark

USA . 819 parts In-Stock

1+ parts

$2.160

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$1.050

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$0.818

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$0.716

819

$2.160

$1.050

$0.818

$0.716

Element14

Singapore . 819 parts In-Stock

1+ parts

$2.280

100+ parts

$1.160

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$0.796

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$0.780

819

$2.280

$1.160

$0.796

$0.780

Rochester

USA . 225 parts In-Stock

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-

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$0.687

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$0.570

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$0.508

225

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$0.687

$0.570

$0.508

Verical

USA . 84 parts In-Stock

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$0.458

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$0.458

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RS (Exports)

UK . 9 parts In-Stock

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$0.825

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$0.571

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$0.825

$0.571

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Distributors (In-Stock)

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Digiode

USA . 204 parts In-Stock

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$0.409

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Vyrian

USA . 2,164 parts In-Stock

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$0.431

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$0.431

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Flip Electronics

USA . 1,250 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,000 parts In-Stock

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IBS Electronics

USA . 950 parts In-Stock

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$0.846

1k+ parts

$0.781

10k+ parts

$0.737

950

-

$0.846

$0.781

$0.737

NAC Semi

USA . 750 parts In-Stock

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$1.040

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750

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$1.040

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ACDS - Activité Composants Distribution Service

France . 99 parts In-Stock

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Bristol Electronics

USA . 99 parts In-Stock

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$0.500

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$0.500

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Dan-Mar Components

USA . 99 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 439 parts In-Stock

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$0.388

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439

$0.388

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Corohmni

South Africa . 443 parts In-Stock

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$0.431

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443

$0.431

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Continental Prestige Electronics

USA . 932 parts In-Stock

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$1.500

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$1.080

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$0.834

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932

$1.500

$1.080

$0.834

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SupplyDigital Components

Austria . 4,901 parts In-Stock

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Problanco Electronics

Mexico . 4,347 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Kepictronics

USA . 2,950 parts In-Stock

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Kulean Microsystems

USA . 2,484 parts In-Stock

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TANS Electronics

Latvia . 2,433 parts In-Stock

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Perfect Parts

USA . 2,236 parts In-Stock

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UHIMA Technologies

Türkiye . 760 parts In-Stock

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Allen Electronics Distributors

USA . 9 parts In-Stock

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$1.208

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$0.835

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9

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$1.208

$0.835

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Overview

Power up your projects with the MJE5730G by Onsemi, a top-quality Power Bipolar Junction Transistor perfect for switching applications. Manufactured by industry leader Onsemi, this PNP transistor offers reliable performance and durability in a convenient rectangular package shape. With a maximum collector-emitter voltage of 300V and a maximum power dissipation of 40W, this transistor provides exceptional value and benefits for your electronic designs. Whether you're a hobbyist or a seasoned professional, the MJE5730G is the perfect choice for all your power switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective, making it a good choice for applications where weight and cost are important factors.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require PNP transistors, making this product suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies the design and implementation of the transistor in circuits, making it easy to use and versatile in various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance, making it ideal for applications that require rapid on/off switching.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and installation in various types of circuits and systems, providing flexibility in design and layout.

Terminal Form: THROUGH-HOLE

The through-hole terminal form makes it easy to solder and connect the transistor to a circuit board, ensuring secure connections and reliable performance.

Maximum Power Dissipation (Abs): 40 W

With a high maximum power dissipation of 40W, this transistor can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating of 300V ensures that the transistor can handle high voltage levels, making it suitable for a wide range of high voltage applications.

Maximum Collector Current (IC): 1 A

The maximum collector current rating of 1A allows this transistor to handle high current loads, making it suitable for applications that require high current switching.

Nominal Transition Frequency (fT): 10 MHz

With a high nominal transition frequency of 10MHz, this transistor can operate at high frequencies, making it suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE5730G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE5730G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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